Мақаланы E-mail арқылы жіберу Phase Transformations in the Film-Substrate System Irradiated with e-beam
- Авторлар: Ivanov Y.F.1,2, Klopotov A.A.2,3, Potekaev A.I.2,4, Laskovnev A.P.5, Teresov A.D.1,2, Tsvetkov N.A.3, Petrikova E.A.1,2, Krysina O.V.1,2, Ivanova O.V.3, Shugurov V.V.1, Shegidevich A.A.5, Kulagina V.V.6,4
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Мекемелер:
- High Current Electronics Institute of the Siberian Branch of the Russian Academy of Sciences
- National Research Tomsk State University
- Tomsk State Architecture and Building University
- V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University
- Physical Technical Institute of the National Academy of Sciences
- Siberian State Medical University
- Шығарылым: Том 60, № 1 (2017)
- Беттер: 175-180
- Бөлім: Article
- URL: https://journals.rcsi.science/1064-8887/article/view/237907
- DOI: https://doi.org/10.1007/s11182-017-1057-z
- ID: 237907
Дәйексөз келтіру
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Рұқсат берілді
Тек жазылушылар үшін
Аннотация
It is reported that irradiation of the film/substrate system (Zr–Ti–Cu)/(A7) with a high-intensity electron beam is followed by the formation of a multi-phase state, whose microhardness is approximately by a factor of 4.5 higher than that of the technical grade aluminum А7, which is due to the substrate structure grain refinement and precipitation of zirconium aluminides in the surface layer.
Негізгі сөздер
Авторлар туралы
Yu. Ivanov
High Current Electronics Institute of the Siberian Branch of the Russian Academy of Sciences; National Research Tomsk State University
Хат алмасуға жауапты Автор.
Email: yufi55@mail.ru
Ресей, Tomsk; Tomsk
A. Klopotov
National Research Tomsk State University; Tomsk State Architecture and Building University
Email: yufi55@mail.ru
Ресей, Tomsk; Tomsk
A. Potekaev
National Research Tomsk State University; V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University
Email: yufi55@mail.ru
Ресей, Tomsk; Tomsk
A. Laskovnev
Physical Technical Institute of the National Academy of Sciences
Email: yufi55@mail.ru
Белоруссия, Minsk
A. Teresov
High Current Electronics Institute of the Siberian Branch of the Russian Academy of Sciences; National Research Tomsk State University
Email: yufi55@mail.ru
Ресей, Tomsk; Tomsk
N. Tsvetkov
Tomsk State Architecture and Building University
Email: yufi55@mail.ru
Ресей, Tomsk
E. Petrikova
High Current Electronics Institute of the Siberian Branch of the Russian Academy of Sciences; National Research Tomsk State University
Email: yufi55@mail.ru
Ресей, Tomsk; Tomsk
O. Krysina
High Current Electronics Institute of the Siberian Branch of the Russian Academy of Sciences; National Research Tomsk State University
Email: yufi55@mail.ru
Ресей, Tomsk; Tomsk
O. Ivanova
Tomsk State Architecture and Building University
Email: yufi55@mail.ru
Ресей, Tomsk
V. Shugurov
High Current Electronics Institute of the Siberian Branch of the Russian Academy of Sciences
Email: yufi55@mail.ru
Ресей, Tomsk
A. Shegidevich
Physical Technical Institute of the National Academy of Sciences
Email: yufi55@mail.ru
Белоруссия, Minsk
V. Kulagina
Siberian State Medical University; V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University
Email: yufi55@mail.ru
Ресей, Tomsk; Tomsk
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