Quasi-Two-Dimensional Electron–Hole Liquid in Si/SiO2 Quantum Wells
- Авторлар: Vasilchenko A.A.1,2, Kopytov G.F.2
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Мекемелер:
- Kuban State Technological University
- Kuban State University
- Шығарылым: Том 61, № 3 (2018)
- Беттер: 457-462
- Бөлім: Physics of Semiconductors and Dielectrics
- URL: https://journals.rcsi.science/1064-8887/article/view/240300
- DOI: https://doi.org/10.1007/s11182-018-1420-8
- ID: 240300
Дәйексөз келтіру
Аннотация
To calculate the energy and equilibrium density of electron-hole pairs in SiO2/Si/SiO2 quantum wells (QWs), nonlinear Schrödinger equations for electrons and holes were numerically solved. Calculations were carried out for (100) and (111) silicon surfaces and various values of the QW width. It is shown that the binding energy of electron-hole pairs in a quasi-two-dimensional electron-hole liquid (EHL) is much higher than the binding energy in a three-dimensional EHL. The results of calculations are compared with the experimental results for a wide range of QW widths.
Негізгі сөздер
Авторлар туралы
A. Vasilchenko
Kuban State Technological University; Kuban State University
Хат алмасуға жауапты Автор.
Email: a_vas2002@mail.ru
Ресей, Krasnodar; Krasnodar
G. Kopytov
Kuban State University
Email: a_vas2002@mail.ru
Ресей, Krasnodar
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