A Study of the Photoluminescence Spectra of AgInS2/ZnS Nanocrystals under γ-Irradiation


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The influence of different doses of γ-radiation from a 137Cs source on photoluminescence of nanocrystals of the Ag–In–S system with a shell of wider-gap ZnS semiconductor and without it has been investigated. The dynamics of change in the nanocrystal photoluminescence depending on the γ-irradiation dose is presented. It is established that nanoparticles of the AgInS2/ZnS system retain their photoluminescence properties and colloidal stability at the absorbed dose up to 6 × 103 Gy (with respect to water). The residual photoluminescence is retained until the absorbed dose is 106 Gy (with respect to H2O). It is shown that AgInS2/ZnS nanocrystals can be used in medical and biological studies, which call for enhanced resistance to γ-radiation.

作者简介

D. Mazing

St. Petersburg Electrotechnical University LETI

编辑信件的主要联系方式.
Email: dmazing@yandex.ru
俄罗斯联邦, St. Petersburg, 197022

N. Romanov

Peter the Great St. Petersburg Polytechnic University; Lappeenranta-Lahti University of Technology

Email: dmazing@yandex.ru
俄罗斯联邦, St. Petersburg, 195251; Lappeenranta, 53850

V. Moshnikov

St. Petersburg Electrotechnical University LETI

Email: dmazing@yandex.ru
俄罗斯联邦, St. Petersburg, 197022

O. Aleksandrova

St. Petersburg Electrotechnical University LETI

Email: dmazing@yandex.ru
俄罗斯联邦, St. Petersburg, 197022

O. Korepanov

St. Petersburg Electrotechnical University LETI

Email: dmazing@yandex.ru
俄罗斯联邦, St. Petersburg, 197022


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