Planar Capacitive Structures Based on Ferroelectric Barium Titanate–Stannate Films on Sapphire for Microwave Applications
- 作者: Tumarkin A.1, Zlygostov M.1, Gagarin A.1, Altynnikov A.1, Sapego E.1
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隶属关系:
- St. Petersburg Electrotechnical University LETI
- 期: 卷 45, 编号 7 (2019)
- 页面: 639-642
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208353
- DOI: https://doi.org/10.1134/S1063785019070137
- ID: 208353
如何引用文章
详细
The structural properties of ferroelectric barium titanate–stannate films on sapphire substrates and microwave characteristics of related planar capacitive elements have been investigated. The gas-medium composition during the film deposition has been established to affect significantly the crystal structure, phase composition, and electric characteristics of the films. The low dielectric loss and high controllability of planar capacitive elements based on barium titanate–stannate films in the frequency range of 2–60 GHz are demonstrated for the first time.
作者简介
A. Tumarkin
St. Petersburg Electrotechnical University LETI
编辑信件的主要联系方式.
Email: avtumarkin@yandex.ru
俄罗斯联邦, St. Petersburg, 197376
M. Zlygostov
St. Petersburg Electrotechnical University LETI
Email: avtumarkin@yandex.ru
俄罗斯联邦, St. Petersburg, 197376
A. Gagarin
St. Petersburg Electrotechnical University LETI
Email: avtumarkin@yandex.ru
俄罗斯联邦, St. Petersburg, 197376
A. Altynnikov
St. Petersburg Electrotechnical University LETI
Email: avtumarkin@yandex.ru
俄罗斯联邦, St. Petersburg, 197376
E. Sapego
St. Petersburg Electrotechnical University LETI
Email: avtumarkin@yandex.ru
俄罗斯联邦, St. Petersburg, 197376