电邮这篇文章 Model of a SiGe 130-nm 10- to 30-GHz Chaotic Self-Oscillating System
- 作者: Efremova E.V.1,2
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隶属关系:
- Kotel’nikov Institute of Radio Engineering and Electronics
- Moscow Institute of Physics and Technology (State University)
- 期: 卷 44, 编号 5 (2018)
- 页面: 378-380
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/207633
- DOI: https://doi.org/10.1134/S106378501805005X
- ID: 207633
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详细
The problem of generation of utlrawideband chaotic oscillations in the frequency range of 10–30 GHz is considered. This problem is relevant to fifth-generation communication systems. A generator model designed for the silicon–germanium 130-nm process technology is proposed and studied.
作者简介
E. Efremova
Kotel’nikov Institute of Radio Engineering and Electronics; Moscow Institute of Physics and Technology (State University)
编辑信件的主要联系方式.
Email: efremova@cplire.ru
俄罗斯联邦, Moscow, 125009; Dolgoprudnyi, Moscow oblast, 141701
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