The Electronic Structure of the Cs/n-GaN(0001) Nano-Interface
- 作者: Benemanskaya G.1, Lapushkin M.1, Marchenko D.2, Timoshnev S.3
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隶属关系:
- Ioffe Physical Technical Institute
- Helmholtz-Zentrum Berlin für Materialen und Energie
- St. Petersburg National Research Academic University
- 期: 卷 44, 编号 3 (2018)
- 页面: 247-250
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/207505
- DOI: https://doi.org/10.1134/S106378501803015X
- ID: 207505
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详细
Electronic structures of the n-GaN(0001) surface and Cs/n-GaN(0001) interface with submonolayer Cs coverages were studied for the first time in situ by the photoelectron spectroscopy (PES) method. The spectra of photoemission from the valence band, surface electron states, and core levels (Ga 3d, Cs 4d, Cs 5p) under synchrotron excitation were measured in a range of photon energies within 50–150 eV. Evolution of the spectrum of surface states near the valence-band maximum was revealed by PES during the adsorption of Cs atoms. A metallic character of the Cs/n-GaN(0001) nano-interface is demonstrated.
作者简介
G. Benemanskaya
Ioffe Physical Technical Institute
Email: Lapushkin@ms.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
M. Lapushkin
Ioffe Physical Technical Institute
编辑信件的主要联系方式.
Email: Lapushkin@ms.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
D. Marchenko
Helmholtz-Zentrum Berlin für Materialen und Energie
Email: Lapushkin@ms.ioffe.ru
德国, Berlin
S. Timoshnev
St. Petersburg National Research Academic University
Email: Lapushkin@ms.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021