The thermal stability of nonalloyed ohmic contacts to AlGaN/GaN heterostructures
- 作者: Pavlov A.1, Pavlov V.1, Slapovskiy D.1
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隶属关系:
- Institute of Ultra High Frequency Semiconductor Electronics
- 期: 卷 43, 编号 11 (2017)
- 页面: 1043-1046
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/206651
- DOI: https://doi.org/10.1134/S1063785017110281
- ID: 206651
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详细
Degradation of nonalloyed ohmic contacts with heavily doped GaN epitaxially grown to the heterostructures with two-dimensional electron gas has been investigated. The change in the relative contact resistivity at temperatures of up to 600°C for the Ti/Pd/Au, Cr/Au, and Cr/Pd/Au metallization compositions has been studied. It is demonstrated that the Cr/Pd/Au metallization composition, the resistivity of which decreases at working temperatures of 400°C, is the most resistant to the effect of temperature. It is shown for the first time that the largest contribution to the increase in the contact resistivity to two-dimensional electron gas upon heating above 400°C is made by the resistivity of the Cr/Pd/Au–n+-GaN metal–dielectric structure, while, at temperatures of 400°C and higher, the resistance between heavily doped GaN and two-dimensional electron gas decreases.
作者简介
A. Pavlov
Institute of Ultra High Frequency Semiconductor Electronics
编辑信件的主要联系方式.
Email: p.alex.ur@yandex.ru
俄罗斯联邦, Moscow, 117105
V. Pavlov
Institute of Ultra High Frequency Semiconductor Electronics
Email: p.alex.ur@yandex.ru
俄罗斯联邦, Moscow, 117105
D. Slapovskiy
Institute of Ultra High Frequency Semiconductor Electronics
Email: p.alex.ur@yandex.ru
俄罗斯联邦, Moscow, 117105