AlInPSbAs/InAs Heterostructures for Thermophotoelectric Converters

Аннотация

Using the method of floating-zone recrystallization with a temperature gradient, AlInPSbAs/InAs heterostructures for thermophotoelectric converters operating in the wavelength range of 500–3200 nm are obtained. The use of the AlInPSbAs quinary solid solutions as an active region thermophotoconverters allows one to increase the external quantum yield up to 0.9 in the spectral range of 520–2800 nm.