Formation of a Nanophase Wetting Layer and Metal Growth on a Semiconductor
- Авторы: Plyusnin N.I.1
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Учреждения:
- Institute of Automation and Control Processes, Far East Branch
- Выпуск: Том 44, № 11 (2018)
- Страницы: 980-983
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208019
- DOI: https://doi.org/10.1134/S1063785018110123
- ID: 208019
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Аннотация
Based on the data on the atomic density of a film and degree of its homogeneity during the formation of the interface between 3d transition metals (Cr, Co, Fe, or Cu) and silicon, a new concept of forming a contact between a reactive metal and a semiconductor has been justified. According to this concept, the low-temperature vapor-phase deposition of a metal onto a semiconductor is accompanied by the formation of a two-dimensional nanophase wetting layer of a metal or its mixture with silicon with a thickness of several monolayers, which significantly affects the interface formation and structure. This concept changes a perspective of forming a contact between a metal and a semiconductor substrate: it is necessary to take into account not only the formation of surface phases and clusters and/or the mixing process, but also the effect of elastic wetting of a substrate by the forming phases.
Об авторах
N. Plyusnin
Institute of Automation and Control Processes, Far East Branch
Автор, ответственный за переписку.
Email: plusnin@iacp.dvo.ru
Россия, Vladivostok, 690041
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