A study of the electrical properties of the porous GaP (111) surface

Аннотация

Local electrical properties of the surface of porous GaP have been measured by the method of tunneling spectroscopy in ultrahigh vacuum. Two surface areas with different electrical properties were found. The effect of anomalous field-induced photoemission was observed. The most probable reason for this effect is the presence of Ga₂O₃ and GaP nanoclusters and the high density of acceptor-type surface states associated with these clusters. Integral characteristics of the field electron emission from the sample surface were obtained by using a computerized recording system with online processing of current–voltage characteristics.