The effect of nitridation parameters and initial growth conditions on the polarity of GaN epitaxial layers grown by plasma-assisted molecular-beam epitaxy on Si(111) substrates
- 作者: Shubina K.Y.1, Berezovskaya T.N.1, Mokhov D.V.1, Mizerov A.M.1, Nikitina E.V.1
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隶属关系:
- St. Petersburg National Research Academic University
- 期: 卷 43, 编号 11 (2017)
- 页面: 976-978
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/206320
- DOI: https://doi.org/10.1134/S1063785017110116
- ID: 206320
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详细
The dependence of the crystallographic polarity of GaN epitaxial layers produced by nitrogen plasma-enhanced molecular-beam epitaxy on Si(111) substrates on the nitridation parameters and initial growth conditions has been studied. A rapid procedure for determining the polarity of GaN epitaxial layers was developed. It was found experimentally that the nitridation parameters of the silicon substrate have no effect on the polarity of a GaN layer. It was shown that the substrate temperature in the stage of nucleation of a GaN epitaxial layer is one of the factors determining its polarity.
作者简介
K. Shubina
St. Petersburg National Research Academic University
编辑信件的主要联系方式.
Email: rein.raus.2010@gmail.com
俄罗斯联邦, St. Petersburg
T. Berezovskaya
St. Petersburg National Research Academic University
Email: rein.raus.2010@gmail.com
俄罗斯联邦, St. Petersburg
D. Mokhov
St. Petersburg National Research Academic University
Email: rein.raus.2010@gmail.com
俄罗斯联邦, St. Petersburg
A. Mizerov
St. Petersburg National Research Academic University
Email: rein.raus.2010@gmail.com
俄罗斯联邦, St. Petersburg
E. Nikitina
St. Petersburg National Research Academic University
Email: rein.raus.2010@gmail.com
俄罗斯联邦, St. Petersburg
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