Growth of Y3Fe5O12/GaN layers by laser molecular-beam epitaxy and characterization of their structural and magnetic properties
- Autores: Kaveev A.1, Bursian V.1, Gastev S.1, Krichevtsov B.1, Suturin S.1, Volkov M.1, Sokolov N.1
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Afiliações:
- Ioffe Physical Technical Institute
- Edição: Volume 42, Nº 12 (2016)
- Páginas: 1156-1158
- Seção: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/202118
- DOI: https://doi.org/10.1134/S1063785016120075
- ID: 202118
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Resumo
Laser molecular-beam epitaxy has been employed to obtain layers of yttrium-iron garnet (YIG) Y3Fe5O12 on gallium nitride substrates. It was found that there exists a polycrystalline YIG phase without admixtures of other structural phases. A magnetic anisotropy of films of the “easy-magnetic plane” type was found. The gyromagnetic ratio and the demagnetizing field 4πMS were calculated.
Sobre autores
A. Kaveev
Ioffe Physical Technical Institute
Autor responsável pela correspondência
Email: kaveev@mail.ioffe.ru
Rússia, St. Petersburg, 194021
V. Bursian
Ioffe Physical Technical Institute
Email: kaveev@mail.ioffe.ru
Rússia, St. Petersburg, 194021
S. Gastev
Ioffe Physical Technical Institute
Email: kaveev@mail.ioffe.ru
Rússia, St. Petersburg, 194021
B. Krichevtsov
Ioffe Physical Technical Institute
Email: kaveev@mail.ioffe.ru
Rússia, St. Petersburg, 194021
S. Suturin
Ioffe Physical Technical Institute
Email: kaveev@mail.ioffe.ru
Rússia, St. Petersburg, 194021
M. Volkov
Ioffe Physical Technical Institute
Email: kaveev@mail.ioffe.ru
Rússia, St. Petersburg, 194021
N. Sokolov
Ioffe Physical Technical Institute
Email: kaveev@mail.ioffe.ru
Rússia, St. Petersburg, 194021