Мақаланы E-mail арқылы жіберу Influence of the Magnetic Anisotropy Dispersion in Ge3Mn5 Clusters on the Temperature Dependences of Magnetization in Thin Ge:Mn Films
- Авторлар: Dmitriev A.1,2, Dmitrieva M.1,2, Ziborov G.3
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Мекемелер:
- Institute of Problems of Chemical Physics, Russian Academy of Sciences
- Russian University of Transport–Moscow State University of Railway Engineering
- Moscow State University
- Шығарылым: Том 45, № 1 (2019)
- Беттер: 34-36
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208186
- DOI: https://doi.org/10.1134/S106378501901022X
- ID: 208186
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Аннотация
The temperature dependences of magnetization M(T) of thin ion-implanted Ge:Mn (4 at % Mn) films containing Ge3Mn5 clusters were measured on samples cooled in the absence of magnetic field (zero field cooled, ZFC) and in a magnetic field of 10 kOe (field-cooled, FC). It has been established that the shape of ZFC–FC differential M(T) curves is determined by lognormal distribution of the size-dependent magnetic anisotropy energy of Ge3Mn5 clusters. Analysis of the observed ZFC–FC magnetization curves allowed the magnetic anisotropy dispersion (variance) and magnetic anisotropy constant to be estimated.
Авторлар туралы
A. Dmitriev
Institute of Problems of Chemical Physics, Russian Academy of Sciences; Russian University of Transport–Moscow State University of Railway Engineering
Хат алмасуға жауапты Автор.
Email: aid@icp.ac.ru
Ресей, Chernogolovka, Moscow oblast, 142432; Moscow, 127055
M. Dmitrieva
Institute of Problems of Chemical Physics, Russian Academy of Sciences; Russian University of Transport–Moscow State University of Railway Engineering
Email: aid@icp.ac.ru
Ресей, Chernogolovka, Moscow oblast, 142432; Moscow, 127055
G. Ziborov
Moscow State University
Email: aid@icp.ac.ru
Ресей, Moscow, 119991
