Stress generation and relaxation in (Al,Ga)N/6H-SiC heterostructure grown by plasma-assisted molecular-beam epitaxy
- Авторлар: Nechaev D.1, Sitnikova A.1, Brunkov P.1, Ivanov S.1, Jmerik V.1
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Мекемелер:
- Ioffe Physical Technical Institute
- Шығарылым: Том 43, № 5 (2017)
- Беттер: 443-446
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/204533
- DOI: https://doi.org/10.1134/S106378501705008X
- ID: 204533
Дәйексөз келтіру
Аннотация
In situ stress generation and relaxation in Al0.25Ga0.75N/GaN/AlN heterostructure with an overall thickness exceeding 3 μm in the process of its growth on a 6H-SiC substrate by low-temperature plasma-assisted molecular-beam epitaxy at substrate temperatures ranging from 690 to 740°C was studied. At room temperature, AlN and GaN layers revealed residual compressive stresses of–2.3 and–0.1 GPa, respectively. This made it possible to avoid cracking during postgrowth cooling of the structure.
Авторлар туралы
D. Nechaev
Ioffe Physical Technical Institute
Хат алмасуға жауапты Автор.
Email: nechayev@mail.ioffe.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021
A. Sitnikova
Ioffe Physical Technical Institute
Email: nechayev@mail.ioffe.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021
P. Brunkov
Ioffe Physical Technical Institute
Email: nechayev@mail.ioffe.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021
S. Ivanov
Ioffe Physical Technical Institute
Email: nechayev@mail.ioffe.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021
V. Jmerik
Ioffe Physical Technical Institute
Email: nechayev@mail.ioffe.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021