Monitoring of elastic stresses with optical system for measuring the substrate curvature in growth of III-N heterostructures by molecular-beam epitaxy
- Авторлар: Zolotukhin D.1, Nechaev D.1, Ivanov S.1, Zhmerik V.1
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Мекемелер:
- Ioffe Physical Technical Institute
- Шығарылым: Том 43, № 3 (2017)
- Беттер: 262-266
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/203822
- DOI: https://doi.org/10.1134/S1063785017030130
- ID: 203822
Дәйексөз келтіру
Аннотация
An original optical system for measuring substrate curvature (OSMSC) is described. The system enables a high-precision analysis of the processes of generation and relaxation of elastic stresses in growth of heterostructures (HSs) based on nitride compounds III-N by plasma-assisted molecular-beam epitaxy (PA-MBE). The application of OSMSC to analyze the growth of GaN/AlN/Si(111) HSs made it possible not only to observe in detail the variation dynamics of elastic stresses in this structure in its metal-enriched growth by low-temperature PA-MBE, but also to develop an HS design eliminating the effect of layer cracking by controlling the compressive stresses.
Авторлар туралы
D. Zolotukhin
Ioffe Physical Technical Institute
Хат алмасуға жауапты Автор.
Email: zolotukhin.beam@mail.ioffe.ru
Ресей, St. Petersburg, 194021
D. Nechaev
Ioffe Physical Technical Institute
Email: zolotukhin.beam@mail.ioffe.ru
Ресей, St. Petersburg, 194021
S. Ivanov
Ioffe Physical Technical Institute
Email: zolotukhin.beam@mail.ioffe.ru
Ресей, St. Petersburg, 194021
V. Zhmerik
Ioffe Physical Technical Institute
Email: zolotukhin.beam@mail.ioffe.ru
Ресей, St. Petersburg, 194021