A microwave cryogenic low-noise amplifier based on sige heterostructures
- Авторлар: Ivanov B.1, Grajcar M.2,3, Novikov I.1, Vostretsov A.1, Il’ichev E.1,4
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Мекемелер:
- Novosibirsk State Technical University
- Department of Experimental Physics
- Institute of Physics
- Leibniz Institute of Photonic Technology
- Шығарылым: Том 42, № 4 (2016)
- Беттер: 380-383
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/198553
- DOI: https://doi.org/10.1134/S1063785016040076
- ID: 198553
Дәйексөз келтіру
Аннотация
A low-noise cryogenic amplifier for the measurement of weak microwave signals at sub-Kelvin temperatures is constructed. The amplifier has five stages based on SiGe bipolar heterostructure transistors and has a gain factor of 35 dB in the frequency band from 100 MHz to 4 GHz at an operating temperature of 800 mK. The parameters of a superconducting quantum bit measured with this amplifier in the ultralow-power mode are presented as an application example. The amplitude–frequency response of the “supercon-ducting qubit–coplanar cavity” structure is demonstrated. The ground state of the qubit is characterized in the quasi-dispersive measurement mode.
Авторлар туралы
B. Ivanov
Novosibirsk State Technical University
Хат алмасуға жауапты Автор.
Email: boris_ivanov@ngs.ru
Ресей, Novosibirsk, 630092
M. Grajcar
Department of Experimental Physics; Institute of Physics
Email: boris_ivanov@ngs.ru
Словакия, Bratislava, SK-84248; Bratislava, 845 11
I. Novikov
Novosibirsk State Technical University
Email: boris_ivanov@ngs.ru
Ресей, Novosibirsk, 630092
A. Vostretsov
Novosibirsk State Technical University
Email: boris_ivanov@ngs.ru
Ресей, Novosibirsk, 630092
E. Il’ichev
Novosibirsk State Technical University; Leibniz Institute of Photonic Technology
Email: boris_ivanov@ngs.ru
Ресей, Novosibirsk, 630092; Jena, 07702