Мақаланы E-mail арқылы жіберу Lasers Based on Quantum Well-Dots Emitting in the 980- and 1080-nm Optical Ranges
- Авторлар: Nadtochiy A.M.1,2,3, Mintairov S.A.2, Kalyuzhnyy N.A.2, Shernyakov Y.M.2, Kornyshov G.O.1,3, Serin A.A.2, Payusov A.S.2, Nevedomsky V.N.2, Gordeev N.Y.2, Maximov M.V.1,2,3, Zhukov A.E.1,3
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Мекемелер:
- St. Petersburg Academic University, Nanotechnology Research and Education Center, Russian Academy of Sciences
- Ioffe Physical Technical Institute, Russian Academy of Sciences
- St. Petersburg National University of Information Technology, Mechanics and Optics (ITMO University)
- Шығарылым: Том 45, № 2 (2019)
- Беттер: 163-166
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208222
- DOI: https://doi.org/10.1134/S1063785019020305
- ID: 208222
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
The main characteristics of edge-emitting lasers with active regions based on nanoheterostructures of a new type—quantum well-dots (QWDs) operating at various wavelengths—are compared. The QWD structures operating at 980- and 1080-nm wavelengths demonstrated minimum values of threshold current density (160 and 125 A/cm2), high internal quantum efficiency (74 and 85%), and low internal losses (1.1 and 0.9 cm–1), respectively.
Авторлар туралы
A. Nadtochiy
St. Petersburg Academic University, Nanotechnology Research and Education Center, Russian Academy of Sciences; Ioffe Physical Technical Institute, Russian Academy of Sciences; St. Petersburg National University of Information Technology, Mechanics and Optics (ITMO University)
Хат алмасуға жауапты Автор.
Email: al.nadtochy@mail.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 194021; St. Petersburg, 197101
S. Mintairov
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: al.nadtochy@mail.ioffe.ru
Ресей, St. Petersburg, 194021
N. Kalyuzhnyy
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: al.nadtochy@mail.ioffe.ru
Ресей, St. Petersburg, 194021
Yu. Shernyakov
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: al.nadtochy@mail.ioffe.ru
Ресей, St. Petersburg, 194021
G. Kornyshov
St. Petersburg Academic University, Nanotechnology Research and Education Center, Russian Academy of Sciences; St. Petersburg National University of Information Technology, Mechanics and Optics (ITMO University)
Email: al.nadtochy@mail.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 197101
A. Serin
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: al.nadtochy@mail.ioffe.ru
Ресей, St. Petersburg, 194021
A. Payusov
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: al.nadtochy@mail.ioffe.ru
Ресей, St. Petersburg, 194021
V. Nevedomsky
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: al.nadtochy@mail.ioffe.ru
Ресей, St. Petersburg, 194021
N. Gordeev
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: al.nadtochy@mail.ioffe.ru
Ресей, St. Petersburg, 194021
M. Maximov
St. Petersburg Academic University, Nanotechnology Research and Education Center, Russian Academy of Sciences; Ioffe Physical Technical Institute, Russian Academy of Sciences; St. Petersburg National University of Information Technology, Mechanics and Optics (ITMO University)
Email: al.nadtochy@mail.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 194021; St. Petersburg, 197101
A. Zhukov
St. Petersburg Academic University, Nanotechnology Research and Education Center, Russian Academy of Sciences; St. Petersburg National University of Information Technology, Mechanics and Optics (ITMO University)
Email: al.nadtochy@mail.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 197101
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