Email this article The Influence of an Amorphous Silicon Layer on the Adsorption Properties of a Semiconductor Structure under Photostimulation Conditions
- Authors: Stetsyura S.V.1, Kozlowski A.V.1, Mitin D.M.2, Serdobintsev A.A.1
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Affiliations:
- Saratov State University
- Ioffe Physical Technical Institute, Russian Academy of Sciences
- Issue: Vol 45, No 1 (2019)
- Pages: 12-15
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208180
- DOI: https://doi.org/10.1134/S1063785019010346
- ID: 208180
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Abstract
The photostimulated adsorption of glucose oxidase (GOx) on the surface of single-crystalline Si wafers with an amorphous silicon (a-Si) layer was examined. Estimation of the difference between the surface coverage by GOx molecules deposited under illumination and in the dark showed that this value increased for the structures with a-Si layer by a factor of 2.5 in the case of n-Si and by a factor of 1.5 in the case of p-Si. It is revealed that the n-Si/a-Si structures can be used for preliminary photostimulation of the GOx adsorption process.
About the authors
S. V. Stetsyura
Saratov State University
Author for correspondence.
Email: Stetsyurasv@mail.ru
Russian Federation, Saratov, 410012
A. V. Kozlowski
Saratov State University
Email: Stetsyurasv@mail.ru
Russian Federation, Saratov, 410012
D. M. Mitin
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: Stetsyurasv@mail.ru
Russian Federation, St. Petersburg, 194021
A. A. Serdobintsev
Saratov State University
Email: Stetsyurasv@mail.ru
Russian Federation, Saratov, 410012
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