Experimental Observation of Delayed Impact-Ionization Avalanche Breakdown in Semiconductor Structures without p–n Junctions
- Authors: Brylevskiy V.I.1, Smirnova I.A.1, Podolska N.I.1, Zharova Y.A.1, Rodin P.B.1, Grekhov I.V.1
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Affiliations:
- Ioffe Institute
- Issue: Vol 44, No 2 (2018)
- Pages: 160-163
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/207334
- DOI: https://doi.org/10.1134/S1063785018020177
- ID: 207334
Cite item
Abstract
We have experimentally studied the dynamics of impact-ionization switching in semiconductor structures without p–n junctions when subnanosecond high-voltage pulses are applied. Silicon n+–n–n+ type structures and volume ZnSe samples with planar ohmic contacts exhibit reversible avalanche switching to the conducting state within about 200 ps, which resembles the well-known phenomenon of delayed avalanche breakdown in reverse-biased p+–n–n+ diode structures. Experimental data are compared to the results of numerical simulations.
About the authors
V. I. Brylevskiy
Ioffe Institute
Email: rodin@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
I. A. Smirnova
Ioffe Institute
Email: rodin@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. I. Podolska
Ioffe Institute
Email: rodin@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
Yu. A. Zharova
Ioffe Institute
Email: rodin@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
P. B. Rodin
Ioffe Institute
Author for correspondence.
Email: rodin@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
I. V. Grekhov
Ioffe Institute
Email: rodin@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021