Photoemission studies of the vicinal SiC(100) 4° surface and the Cs/SiC(100) 4° interface
- Authors: Benemanskaya G.V.1,2, Dementev P.A.1,2, Kukushkin S.A.2,3,4, Lapushkin M.N.1,2,3, Osipov A.V.2,3, Timoshnev S.N.2,5
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Affiliations:
- Ioffe Physical Technical Institute
- Institute of Problems of Mechanical Engineering
- ITMO University
- Peter the Great St. Petersburg Polytechnic University
- St. Petersburg National Research Academic University
- Issue: Vol 42, No 12 (2016)
- Pages: 1145-1148
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/202095
- DOI: https://doi.org/10.1134/S1063785016120026
- ID: 202095
Cite item
Abstract
Photoemission studies of the electronic structure of the vicinal SiC(100) 4° surface, which was grown using a new substrate atom substitution method, and the Cs/SiC(100) 4° interface have been performed for the first time. The modification of spectra of the valence band and C 1s and Si 2p core levels in the process of formation of the Cs/SiC(100) 4° interface was analyzed. The suppression of the surface SiC state with a binding energy of 2.8 eV and the formation of a cesium-induced state with a binding energy of 10.5 eV were observed. The modification of the complex component structure in the spectrum of C 1s core level has been detected and examined for the first time. It was found that Cs adsorption on the vicinal SiC(100) 4° surface results in intercalation of graphene islands on SiC(100) 4° with Cs atoms.
About the authors
G. V. Benemanskaya
Ioffe Physical Technical Institute; Institute of Problems of Mechanical Engineering
Email: Lapushkin@ms.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 199178
P. A. Dementev
Ioffe Physical Technical Institute; Institute of Problems of Mechanical Engineering
Email: Lapushkin@ms.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 199178
S. A. Kukushkin
Institute of Problems of Mechanical Engineering; ITMO University; Peter the Great St. Petersburg Polytechnic University
Email: Lapushkin@ms.ioffe.ru
Russian Federation, St. Petersburg, 199178; St. Petersburg, 197101; St. Petersburg, 195251
M. N. Lapushkin
Ioffe Physical Technical Institute; Institute of Problems of Mechanical Engineering; ITMO University
Author for correspondence.
Email: Lapushkin@ms.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 199178; St. Petersburg, 197101
A. V. Osipov
Institute of Problems of Mechanical Engineering; ITMO University
Email: Lapushkin@ms.ioffe.ru
Russian Federation, St. Petersburg, 199178; St. Petersburg, 197101
S. N. Timoshnev
Institute of Problems of Mechanical Engineering; St. Petersburg National Research Academic University
Email: Lapushkin@ms.ioffe.ru
Russian Federation, St. Petersburg, 199178; St. Petersburg, 194021