Photoluminescence at the fundamental absorption edge of single-crystal silicon textured without masking
- Authors: Emel’yanov A.M.1, Abolmasov S.N.2, Terukov E.I.1,2
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Affiliations:
- Ioffe Physical-Technical Institute
- R&D Center for Thin-Film Technologies in Energetics
- Issue: Vol 42, No 10 (2016)
- Pages: 1002-1004
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/201569
- DOI: https://doi.org/10.1134/S1063785016100059
- ID: 201569
Cite item
Abstract
The extraction efficiencies of edge luminescence from single-crystal silicon have been compared for three structures: textured without masking, untextured, and textured with masking by the technology of high-efficiency solar cells. The highest efficiency was obtained for the structure textured without masking. For this structure, the efficiency of power conversion at a wavelength of ~0.66 μm and power of 75 mW into edge PL power emerging from the semiconductor was η ≈ 0.8% under the nonradiative recombination conditions described by the exponential photoluminescence (PL) decay time constant of ~0.11 ms. The directivity diagrams of the edge PL were measured for the three structures under study.
About the authors
A. M. Emel’yanov
Ioffe Physical-Technical Institute
Author for correspondence.
Email: Emelyanov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. N. Abolmasov
R&D Center for Thin-Film Technologies in Energetics
Email: Emelyanov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194064
E. I. Terukov
Ioffe Physical-Technical Institute; R&D Center for Thin-Film Technologies in Energetics
Email: Emelyanov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194064