Technical Physics Letters
ISSN 1063-7850 (Print)
ISSN 1090-6533 (Online)
Menu
Archives
Home
About the Journal
Editorial Team
Editorial Policies
Author Guidelines
About the Journal
Issues
Search
Current
Archives
Contact
All Journals
User
Username
Password
Remember me
Forgot password?
Register
Notifications
View
Subscribe
Search
Search
Search Scope
All
Authors
Title
Abstract
Index terms
Full Text
Browse
By Issue
By Author
By Title
By Sections
Other Journals
Subscription
Login to verify subscription
Keywords
Fullerene
Mach Number
Martensite
Shock Wave
Technical Physic Letter
dark current.
epitaxy
heterostructure
high-electron-mobility transistor
magnetic field
mass spectrum
molecular beam epitaxy
multijunction solar cell
photoluminescence
plasma
quantum dots
semiconductor laser
silicon
tokamak
wide-bandgap semiconductors
zinc oxide
Information
For Readers
For Authors
For Librarians
×
User
Username
Password
Remember me
Forgot password?
Register
Notifications
View
Subscribe
Search
Search
Search Scope
All
Authors
Title
Abstract
Index terms
Full Text
Browse
By Issue
By Author
By Title
By Sections
Other Journals
Subscription
Login to verify subscription
Keywords
Fullerene
Mach Number
Martensite
Shock Wave
Technical Physic Letter
dark current.
epitaxy
heterostructure
high-electron-mobility transistor
magnetic field
mass spectrum
molecular beam epitaxy
multijunction solar cell
photoluminescence
plasma
quantum dots
semiconductor laser
silicon
tokamak
wide-bandgap semiconductors
zinc oxide
Information
For Readers
For Authors
For Librarians
Home
>
Search
>
Author Details
Author Details
Zdoroveishchev, A. V.
Issue
Section
Title
File
Vol 45, No 7 (2019)
Article
Diode Structures Based on (In, Fe)Sb/GaAs Magnetic Heterojunctions
This website uses cookies
You consent to our cookies if you continue to use our website.
About Cookies
TOP
