Email this article Model for Thermal Oxidation of Silicon
- Authors: Fadeev A.V.1, Devyatko Y.N.2
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Affiliations:
- Valiev Institute of Physics and Technology, Russian Academy of Sciences
- National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
- Issue: Vol 64, No 4 (2019)
- Pages: 575-581
- Section: Physical Electronics
- URL: https://journals.rcsi.science/1063-7842/article/view/203335
- DOI: https://doi.org/10.1134/S1063784219040108
- ID: 203335
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Abstract
Nanometer-thick silicon oxide films are needed for miniaturization and increase in the working rate of electronic devices. Interpretation of the initial stages of silicon oxidation is necessary for fabrication of such structures. A theoretical model of the thermal oxidation of thin silicon monolayers that takes into account an increase in the stress in the transition (oxide–substrate) layer due to oxygen accumulation therein is proposed.
About the authors
A. V. Fadeev
Valiev Institute of Physics and Technology, Russian Academy of Sciences
Author for correspondence.
Email: AlexVFadeev@gmail.com
Russian Federation, Moscow, 117218
Yu. N. Devyatko
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Author for correspondence.
Email: ydevyatko@mail.ru
Russian Federation, Moscow, 115409
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