Influence of a Buffer Layer on the Formation of a Thin-Film Nickel Catalyst for Carbon Nanotube Synthesis
- Авторлар: Bulyarskiy S.V.1, Zenova E.V.1, Lakalin A.V.1, Molodenskii M.S.1, Pavlov A.A.1, Tagachenkov A.M.1, Terent’ev A.V.1,2
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Мекемелер:
- Institute of Nanotechnologies for Microelectronics, Russian Academy of Sciences
- National Research University Higher School of Economics
- Шығарылым: Том 63, № 12 (2018)
- Беттер: 1834-1839
- Бөлім: Physics of Nanostructures
- URL: https://journals.rcsi.science/1063-7842/article/view/202522
- DOI: https://doi.org/10.1134/S1063784218120253
- ID: 202522
Дәйексөз келтіру
Аннотация
The formation of nanoparticles of a thin-film nickel catalyst applied on a buffer layer in the form of pure titanium, titanium oxide, or titanium nitride has been studied. It has been shown that if nanotubes are synthesized in three stages (oxidation, reduction, and growth of nanotubes), the situation may arise when the metallic catalyst becomes isolated from the surface, and hence, from the hydrocarbon flux, as a result of which the nanotube growth stops. Isolation takes place when the interface between titanium oxide and the gas phase in the reactor moves. In this case, titanium oxide goes round a nickel oxide nanoparticle and insulates it. The displacement rate of this interface and the coefficient of hydrogen diffusion in titanium dioxide have been determined.
Авторлар туралы
S. Bulyarskiy
Institute of Nanotechnologies for Microelectronics, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: bulyar2954@mail.ru
Ресей, Leninskii pr. 32A, Moscow, 119991
E. Zenova
Institute of Nanotechnologies for Microelectronics, Russian Academy of Sciences
Email: bulyar2954@mail.ru
Ресей, Leninskii pr. 32A, Moscow, 119991
A. Lakalin
Institute of Nanotechnologies for Microelectronics, Russian Academy of Sciences
Email: bulyar2954@mail.ru
Ресей, Leninskii pr. 32A, Moscow, 119991
M. Molodenskii
Institute of Nanotechnologies for Microelectronics, Russian Academy of Sciences
Email: bulyar2954@mail.ru
Ресей, Leninskii pr. 32A, Moscow, 119991
A. Pavlov
Institute of Nanotechnologies for Microelectronics, Russian Academy of Sciences
Email: bulyar2954@mail.ru
Ресей, Leninskii pr. 32A, Moscow, 119991
A. Tagachenkov
Institute of Nanotechnologies for Microelectronics, Russian Academy of Sciences
Email: bulyar2954@mail.ru
Ресей, Leninskii pr. 32A, Moscow, 119991
A. Terent’ev
Institute of Nanotechnologies for Microelectronics, Russian Academy of Sciences; National Research University Higher School of Economics
Email: bulyar2954@mail.ru
Ресей, Leninskii pr. 32A, Moscow, 119991; Myasnitskaya ul. 20, Moscow, 101000
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