The Numerical Simulation of the Nanosecond Switching of a p-SOS Diode
- 作者: Podolska N.1, Lyublinskiy A.1, Grekhov I.1
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隶属关系:
- Ioffe Institute
- 期: 卷 62, 编号 12 (2017)
- 页面: 1787-1790
- 栏目: Theoretical and Mathematical Physics
- URL: https://journals.rcsi.science/1063-7842/article/view/200334
- DOI: https://doi.org/10.1134/S1063784217120192
- ID: 200334
如何引用文章
详细
Abrupt high-density reverse current interruption has been numerically simulated for switching from forward to reverse bias in a silicon p+P0n+ structure (p-SOS diode). It has been shown that the current interruption in this structure occurs as a result of the formation of two dynamic domains of a strong electric field in regions in which the free carrier concentration substantially exceeds the concentration of the doping impurity. The first domain is formed in the n+ region at the n+P0 junction, while the second domain is formed in the P0 region at the interface with the p+ layer. The second domain expands much faster, and this domain mainly determines the current interruption rate. Good agreement is achieved between the simulation results and the experimental data when the actual electric circuit determining the electron–hole plasma pumping in and out is accurately taken into account.
作者简介
N. Podolska
Ioffe Institute
编辑信件的主要联系方式.
Email: natalya@scc.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Lyublinskiy
Ioffe Institute
Email: natalya@scc.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
I. Grekhov
Ioffe Institute
Email: natalya@scc.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021