Fabrication of nanostructured silicon surface using selective chemical etching
- 作者: Sagyndykov A.B.1, Kalkozova Z.K.2, Yar-Mukhamedova G.S.1, Abdullin K.A.2
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隶属关系:
- Al-Farabi Kazakh National University
- National Nanotechnology Open Laboratory
- 期: 卷 62, 编号 11 (2017)
- 页面: 1675-1678
- 栏目: Physical Science of Materials
- URL: https://journals.rcsi.science/1063-7842/article/view/200230
- DOI: https://doi.org/10.1134/S106378421711024X
- ID: 200230
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详细
A two-stage process based on selective chemical etching induced by metal nanoclusters is used to fabricate nanostructured surfaces of silicon plates with a relatively low reflectance. At silicon surfaces covered with silver nanoclusters, the SERS effect is observed for rhodamine concentrations of about 10–12 M. At certain technological parameters, the depth of the nanostructured layer weakly depends on the conditions for the two-stage etching, in particular, etching time. Under otherwise equal conditions for etching, the rate of the formation of textured layer in the p-type silicon is two times greater than the formation rate in the n-type silicon.
作者简介
A. Sagyndykov
Al-Farabi Kazakh National University
Email: zh.kalkozova@mail.ru
哈萨克斯坦, Almaty, 050000
Zh. Kalkozova
National Nanotechnology Open Laboratory
编辑信件的主要联系方式.
Email: zh.kalkozova@mail.ru
哈萨克斯坦, Almaty, 050040
G. Yar-Mukhamedova
Al-Farabi Kazakh National University
Email: zh.kalkozova@mail.ru
哈萨克斯坦, Almaty, 050000
Kh. Abdullin
National Nanotechnology Open Laboratory
Email: zh.kalkozova@mail.ru
哈萨克斯坦, Almaty, 050040
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