Spin-tunneling magnetoresistive elements based on multilayered nanostructures
- Авторы: Amelichev V.1, Belyakov P.1, Vasil’ev D.1, Zhukov D.1, Kazakov Y.1, Kostyuk D.1, Orlov E.1, Kasatkin S.2, Krikunov A.3
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Учреждения:
- Innovation and Technology Center of the National Research University of Electronic Technology
- Trapeznikov Institute of Control Sciences
- OOO NPK Fotron-Avto
- Выпуск: Том 62, № 8 (2017)
- Страницы: 1281-1283
- Раздел: Short Communications
- URL: https://journals.rcsi.science/1063-7842/article/view/199900
- DOI: https://doi.org/10.1134/S1063784217080023
- ID: 199900
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Аннотация
The results of studies of characteristics of spin-tunneling magnetoresistive (STMR) elements fabricated from multilayered nanostructures using a mask technique have been considered. The parameters of magnetic annealing of STMR elements have experimentally been obtained. The results of these experiments have shown that a magnitude of the magnetoresistive effect can increase by four to five or more times. The test samples of STMR elements, which have a magnitude of the giant magnetoresistive effect up to 50% and a resistance of 30–35 kΩ, have been studied in the absence of a magnetic field.
Об авторах
V. Amelichev
Innovation and Technology Center of the National Research University of Electronic Technology
Автор, ответственный за переписку.
Email: goodnessgims@mail.ru
Россия, Zelenograd, 124498
P. Belyakov
Innovation and Technology Center of the National Research University of Electronic Technology
Email: goodnessgims@mail.ru
Россия, Zelenograd, 124498
D. Vasil’ev
Innovation and Technology Center of the National Research University of Electronic Technology
Email: goodnessgims@mail.ru
Россия, Zelenograd, 124498
D. Zhukov
Innovation and Technology Center of the National Research University of Electronic Technology
Email: goodnessgims@mail.ru
Россия, Zelenograd, 124498
Yu. Kazakov
Innovation and Technology Center of the National Research University of Electronic Technology
Email: goodnessgims@mail.ru
Россия, Zelenograd, 124498
D. Kostyuk
Innovation and Technology Center of the National Research University of Electronic Technology
Email: goodnessgims@mail.ru
Россия, Zelenograd, 124498
E. Orlov
Innovation and Technology Center of the National Research University of Electronic Technology
Email: goodnessgims@mail.ru
Россия, Zelenograd, 124498
S. Kasatkin
Trapeznikov Institute of Control Sciences
Email: goodnessgims@mail.ru
Россия, Moscow, 117997
A. Krikunov
OOO NPK Fotron-Avto
Email: goodnessgims@mail.ru
Россия, Moscow, 117105