Charge transfer and thermopower in TlGdS2

Аннотация

The temperature dependences of the dc conductivity and thermoelectric coefficient of TlGdS₂ in the temperature interval of 77–373 K have been studied for the first time. It has been found that, at low temperatures (114–250 K), the compound has conductivity of the p-type and charge transfer in its energy gap follows the hopping mechanism. The main parameters of localized electronic states in the energy gap have been determined.