Evolution of Shock Waves in Hot-Pressed Ceramics of Boron Carbide and Silicon Carbide
- Авторы: Savinykh A.S.1,2, Cherepanov I.A.3, Razorenov S.V.1,2, Ovsienko A.I.4, Rumyantsev V.I.4, Ordan’yan S.S.5
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							Учреждения: 
							- Institute of Problems of Chemical Physics, Russian Academy of Sciences
- Tomsk State University
- Moscow State University
- OOO VIRIAL
- St. Petersburg State Institute of Technology (Technical University)
 
- Выпуск: Том 63, № 12 (2018)
- Страницы: 1755-1761
- Раздел: Solid State
- URL: https://journals.rcsi.science/1063-7842/article/view/202429
- DOI: https://doi.org/10.1134/S1063784218120186
- ID: 202429
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Аннотация
In this paper we studied the evolution of shock compression waves in hot-pressed ceramics based on boron carbide and silicon carbide at a maximum compressive stress of 32 and 34 GPa, respectively, to determine the possible contribution of relaxation processes to the resistance to high-rate deformation. At a change in sample thickness from 0.5 to 8 mm, an appreciable decay of the elastic precursor was observed in boron carbide while an insignificant anomalous growth of the elastic precursor with a sample thickness was observed in the experiments with silicon carbide samples of various thickness. The measured value of the Hugoniot elastic limit of samples with a thickness of 8 mm was σHEL = 17.2 ± 1.3 GPa for boron carbide and σHEL = 15 ± 0.1 GPa for silicon carbide.
Об авторах
A. Savinykh
Institute of Problems of Chemical Physics, Russian Academy of Sciences; Tomsk State University
							Автор, ответственный за переписку.
							Email: savas@ficp.ac.ru
				                					                																			                												                	Россия, 							Chernogolovka, 142432; Tomsk, 634050						
I. Cherepanov
Moscow State University
														Email: savas@ficp.ac.ru
				                					                																			                												                	Россия, 							Moscow, 119991						
S. Razorenov
Institute of Problems of Chemical Physics, Russian Academy of Sciences; Tomsk State University
														Email: savas@ficp.ac.ru
				                					                																			                												                	Россия, 							Chernogolovka, 142432; Tomsk, 634050						
A. Ovsienko
OOO VIRIAL
														Email: savas@ficp.ac.ru
				                					                																			                												                	Россия, 							St. Petersburg, 194156						
V. Rumyantsev
OOO VIRIAL
														Email: savas@ficp.ac.ru
				                					                																			                												                	Россия, 							St. Petersburg, 194156						
S. Ordan’yan
St. Petersburg State Institute of Technology (Technical University)
														Email: savas@ficp.ac.ru
				                					                																			                												                	Россия, 							St. Petersburg, 190013						
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