SemiconductorsSemiconductorsSemiconductors1063-78261090-6479Физико-технический институт им. А.Ф.Иоффе РАН20709510.1134/S1063782619090069Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019Research ArticleFeatures of the Impurity-Photoconductivity Spectra of PbSnTe(In) Epitaxial Films with Temperature ChangesIkonnikovA. V.
Russian Federation
antikon@physics.msu.ruChernichkinV. I.
Russian Federation
antikon@physics.msu.ruDudinV. S.
Russian Federation
antikon@physics.msu.ruAkopianD. A.
Russian Federation
antikon@physics.msu.ruAkimovA. N.
Russian Federation
antikon@physics.msu.ruKlimovA. E.
Russian Federation
antikon@physics.msu.ruTereshchenkoO. E.
Russian Federation
antikon@physics.msu.ruRyabovaL. I.
Russian Federation
antikon@physics.msu.ruKhokhlovD. R.
Russian Federation
antikon@physics.msu.ruMoscow State UniversityRzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of SciencesNovosibirsk State Technical UniversityNovosibirsk State UniversityLebedev Physical Institute, Russian Academy of Sciences010920195391272127723122023Copyright ©; 2019, Pleiades Publishing, Ltd.2019Pleiades Publishing, Ltd.https://journals.rcsi.science/1063-7826/article/view/207095

The photoconductivity spectra of PbSnTe(In) epitaxial films are investigated by Fourier spectroscopy in the far infrared range at temperatures from 4.2 to 32.4 K. In addition to interband transitions, subgap features associated with the excitation of impurity-defect states are found in the spectra. The evolution of the spectra with temperature and additional illumination is traced.

photoconductivityimpurity statessurface statesPbSnTeBurstein–Moss effect