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<article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" article-type="research-article" dtd-version="1.2" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">Semiconductors</journal-id><journal-title-group><journal-title xml:lang="en">Semiconductors</journal-title><trans-title-group xml:lang="ru"><trans-title>Semiconductors</trans-title></trans-title-group></journal-title-group><issn publication-format="print">1063-7826</issn><issn publication-format="electronic">1090-6479</issn><publisher><publisher-name xml:lang="en">Физико-технический институт им. А.Ф.Иоффе РАН</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="publisher-id">207063</article-id><article-id pub-id-type="doi">10.1134/S1063782619090240</article-id><article-categories><subj-group subj-group-type="toc-heading"><subject>Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019</subject></subj-group><subj-group subj-group-type="article-type"><subject>Research Article</subject></subj-group></article-categories><title-group><article-title xml:lang="en">Evolution of the Impurity Photoconductivity in CdHgTe Epitaxial Films with Temperature</article-title></title-group><contrib-group><contrib contrib-type="author"><name><surname>Uaman Svetikova</surname><given-names>T. A.</given-names></name><address><country country="RU">Russian Federation</country></address><email>antikon@physics.msu.ru</email><xref ref-type="aff" rid="aff1"/></contrib><contrib contrib-type="author"><name><surname>Ikonnikov</surname><given-names>A. V.</given-names></name><address><country country="RU">Russian Federation</country></address><email>antikon@physics.msu.ru</email><xref ref-type="aff" rid="aff1"/></contrib><contrib contrib-type="author"><name><surname>Rumyantsev</surname><given-names>V. V.</given-names></name><address><country country="RU">Russian Federation</country></address><email>antikon@physics.msu.ru</email><xref ref-type="aff" rid="aff2"/></contrib><contrib contrib-type="author"><name><surname>Kozlov</surname><given-names>D. V.</given-names></name><address><country country="RU">Russian Federation</country></address><email>antikon@physics.msu.ru</email><xref ref-type="aff" rid="aff2"/></contrib><contrib contrib-type="author"><name><surname>Chernichkin</surname><given-names>V. I.</given-names></name><address><country country="RU">Russian Federation</country></address><email>antikon@physics.msu.ru</email><xref ref-type="aff" rid="aff1"/></contrib><contrib contrib-type="author"><name><surname>Galeeva</surname><given-names>A. V.</given-names></name><address><country country="RU">Russian Federation</country></address><email>antikon@physics.msu.ru</email><xref ref-type="aff" rid="aff1"/></contrib><contrib contrib-type="author"><name><surname>Varavin</surname><given-names>V. S.</given-names></name><address><country country="RU">Russian Federation</country></address><email>antikon@physics.msu.ru</email><xref ref-type="aff" rid="aff3"/></contrib><contrib contrib-type="author"><name><surname>Mikhailov</surname><given-names>N. N.</given-names></name><address><country country="RU">Russian Federation</country></address><email>antikon@physics.msu.ru</email><xref ref-type="aff" rid="aff3"/></contrib><contrib contrib-type="author"><name><surname>Dvoretskii</surname><given-names>S. A.</given-names></name><address><country country="RU">Russian Federation</country></address><email>antikon@physics.msu.ru</email><xref ref-type="aff" rid="aff3"/></contrib><contrib contrib-type="author"><name><surname>Morozov</surname><given-names>S. V.</given-names></name><address><country country="RU">Russian Federation</country></address><email>antikon@physics.msu.ru</email><xref ref-type="aff" rid="aff2"/></contrib><contrib contrib-type="author"><name><surname>Gavrilenko</surname><given-names>V. I.</given-names></name><address><country country="RU">Russian Federation</country></address><email>antikon@physics.msu.ru</email><xref ref-type="aff" rid="aff2"/></contrib></contrib-group><aff id="aff1"><institution>Moscow State University</institution></aff><aff id="aff2"><institution>Institute for Physics of Microstructures, Russian Academy of Sciences</institution></aff><aff id="aff3"><institution>Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences</institution></aff><pub-date date-type="pub" iso-8601-date="2019-09-01" publication-format="electronic"><day>01</day><month>09</month><year>2019</year></pub-date><volume>53</volume><issue>9</issue><fpage>1266</fpage><lpage>1271</lpage><history><date date-type="received" iso-8601-date="2023-12-23"><day>23</day><month>12</month><year>2023</year></date></history><permissions><copyright-statement xml:lang="en">Copyright ©; 2019, Pleiades Publishing, Ltd.</copyright-statement><copyright-year>2019</copyright-year><copyright-holder xml:lang="en">Pleiades Publishing, Ltd.</copyright-holder></permissions><self-uri xlink:href="https://journals.rcsi.science/1063-7826/article/view/207063">https://journals.rcsi.science/1063-7826/article/view/207063</self-uri><abstract xml:lang="en"><p><ext-link><!-- named anchor --></ext-link></p><p id="idm45257554294016">The photoconductivity spectra of epitaxial CdHgTe films are investigated by Fourier-transform spectroscopy at various temperatures. Features associated with both the interband absorption and ionization of impurity/defect states are found in the spectra. Their evolution with temperature is traced. The temperatures of “vanishing” of the impurity features are determined, which makes it possible to assess the acceptor concentration in the structures under study using the electroneutrality equation.</p></abstract><kwd-group xml:lang="en"><kwd>photoconductivity</kwd><kwd>impurity</kwd><kwd>CdHgTe</kwd><kwd>Fourier-transform spectroscopy</kwd></kwd-group></article-meta></front><body></body><back><ref-list/></back></article>
