SemiconductorsSemiconductorsSemiconductors1063-78261090-6479Физико-технический институт им. А.Ф.Иоффе РАН20695010.1134/S1063782619090276Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019Research ArticleSimulation of the Formation of a Cascade of Displacements and Transient Ionization Processes in Silicon Semiconductor Structures under Neutron ExposureZabavichevI. Yu.
Russian Federation
zabavichev.rf@gmail.comPotehinA. A.
Russian Federation
zabavichev.rf@gmail.comPuzanovA. S.
Russian Federation
zabavichev.rf@gmail.comObolenskiyS. V.
Russian Federation
zabavichev.rf@gmail.comKozlovV. A.
Russian Federation
zabavichev.rf@gmail.comLobachevsky State University of Nizhny NovgorodBranch of the Russian Federal Nuclear Center All-Russian Research Institute of Experimental Physics “Sedakov Scientific Research Institute of Measurement Systems”Institute for Physics of Microstructures, Russian Academy of Sciences010920195391249125423122023Copyright ©; 2019, Pleiades Publishing, Ltd.2019Pleiades Publishing, Ltd.https://journals.rcsi.science/1063-7826/article/view/206950

The formation of a disordered defect region in bulk silicon is simulated using the molecular-dynamics method for various energies of a primary recoil atom. Variations in the volume and number of radiation-induced defects in a cluster during its formation are calculated. The generation rates of nonequilibrium carriers and amplitude-temporal dependences of pulses of ionization currents in test Schottky diodes with hyperhigh frequencies are found theoretically.

molecular-dynamics methodcluster of radiation-induced defectshigh-performance calculations