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<article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" article-type="research-article" dtd-version="1.2" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">Semiconductors</journal-id><journal-title-group><journal-title xml:lang="en">Semiconductors</journal-title><trans-title-group xml:lang="ru"><trans-title>Semiconductors</trans-title></trans-title-group></journal-title-group><issn publication-format="print">1063-7826</issn><issn publication-format="electronic">1090-6479</issn><publisher><publisher-name xml:lang="en">Физико-технический институт им. А.Ф.Иоффе РАН</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="publisher-id">206781</article-id><article-id pub-id-type="doi">10.1134/S1063782619090136</article-id><article-categories><subj-group subj-group-type="toc-heading"><subject>Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019</subject></subj-group><subj-group subj-group-type="article-type"><subject>Research Article</subject></subj-group></article-categories><title-group><article-title xml:lang="en">Plasma-Chemical Deposition of Diamond-Like Films onto the Surface of Heavily Doped Single-Crystal Diamond</article-title></title-group><contrib-group><contrib contrib-type="author"><name><surname>Korolyov</surname><given-names>S. A.</given-names></name><address><country country="RU">Russian Federation</country></address><email>andy-ohapkin@yandex.ru</email><xref ref-type="aff" rid="aff1"/></contrib><contrib contrib-type="author"><name><surname>Kraev</surname><given-names>S. A.</given-names></name><address><country country="RU">Russian Federation</country></address><email>andy-ohapkin@yandex.ru</email><xref ref-type="aff" rid="aff1"/></contrib><contrib contrib-type="author"><name><surname>Arkhipova</surname><given-names>E. A.</given-names></name><address><country country="RU">Russian Federation</country></address><email>andy-ohapkin@yandex.ru</email><xref ref-type="aff" rid="aff1"/></contrib><contrib contrib-type="author"><name><surname>Skorokhodov</surname><given-names>E. V.</given-names></name><address><country country="RU">Russian Federation</country></address><email>andy-ohapkin@yandex.ru</email><xref ref-type="aff" rid="aff1"/></contrib><contrib contrib-type="author"><name><surname>Bushuykin</surname><given-names>P. A.</given-names></name><address><country country="RU">Russian Federation</country></address><email>andy-ohapkin@yandex.ru</email><xref ref-type="aff" rid="aff1"/></contrib><contrib contrib-type="author"><name><surname>Shashkin</surname><given-names>V. I.</given-names></name><address><country country="RU">Russian Federation</country></address><email>andy-ohapkin@yandex.ru</email><xref ref-type="aff" rid="aff1"/></contrib><contrib contrib-type="author"><name><surname>Okhapkin</surname><given-names>A. I.</given-names></name><address><country country="RU">Russian Federation</country></address><email>andy-ohapkin@yandex.ru</email><xref ref-type="aff" rid="aff1"/></contrib><contrib contrib-type="author"><name><surname>Yunin</surname><given-names>P. A.</given-names></name><address><country country="RU">Russian Federation</country></address><email>andy-ohapkin@yandex.ru</email><xref ref-type="aff" rid="aff1"/></contrib><contrib contrib-type="author"><name><surname>Drozdov</surname><given-names>M. N.</given-names></name><address><country country="RU">Russian Federation</country></address><email>andy-ohapkin@yandex.ru</email><xref ref-type="aff" rid="aff1"/></contrib></contrib-group><aff id="aff1"><institution>Institute for Physics of Microstructures, Russian Academy of Sciences</institution></aff><pub-date date-type="pub" iso-8601-date="2019-09-01" publication-format="electronic"><day>01</day><month>09</month><year>2019</year></pub-date><volume>53</volume><issue>9</issue><fpage>1203</fpage><lpage>1206</lpage><history><date date-type="received" iso-8601-date="2023-12-23"><day>23</day><month>12</month><year>2023</year></date></history><permissions><copyright-statement xml:lang="en">Copyright ©; 2019, Pleiades Publishing, Ltd.</copyright-statement><copyright-year>2019</copyright-year><copyright-holder xml:lang="en">Pleiades Publishing, Ltd.</copyright-holder></permissions><self-uri xlink:href="https://journals.rcsi.science/1063-7826/article/view/206781">https://journals.rcsi.science/1063-7826/article/view/206781</self-uri><abstract xml:lang="en"><p><ext-link><!-- named anchor --></ext-link></p><p id="idm45257554299728">The plasma-chemical deposition of diamond-like carbon (DLC) films onto heavily boron-doped single-crystal <italic>p</italic>-type diamond (the concentration ~10<sup>20</sup> cm<sup>–3</sup>) in CH<sub>4</sub> + Ar plasma is conducted. The deposition rate is 7 nm min<sup>–1</sup>. The elemental composition and properties of the films are studied in detail. It is found that the films are enriched with hydrogen, possess a density of 2.4 g cm<sup>–3</sup>, and exhibit an ultrasmooth surface (with a roughness of 0.4 ± 0.2 nm).</p></abstract><kwd-group xml:lang="en"><kwd>diamond-like carbon</kwd><kwd>plasma-chemical deposition</kwd><kwd>single-crystal diamond</kwd></kwd-group></article-meta></front><body></body><back><ref-list/></back></article>
