SemiconductorsSemiconductorsSemiconductors1063-78261090-6479Физико-технический институт им. А.Ф.Иоффе РАН20676310.1134/S1063782619090124Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019Research ArticleComparison of the Features of Electron Transport and Subterahertz Generation in Diodes Based on 6-, 18-, 70-, and 120-Period GaAs/AlAs SuperlatticesObolenskayaE. S.
Russian Federation
bess009@mail.ruIvanovA. S.
Russian Federation
bess009@mail.ruPavelyevD. G.
Russian Federation
bess009@mail.ruKozlovV. A.
Russian Federation
bess009@mail.ruVasilevA. P.
Russian Federation
bess009@mail.ruLobachevsky State University of Nizhny NovgorodInstitute for Physics of Microstructures, Russian Academy of SciencesResearch and Engineering Center for Submicron Heterostructures for MicroelectronicsIoffe Institute010920195391192119723122023Copyright ©; 2019, Pleiades Publishing, Ltd.2019Pleiades Publishing, Ltd.https://journals.rcsi.science/1063-7826/article/view/206763

A comparison of the features of electron transport in diodes based on 6-, 18-, 30-, 70-, and 120-period GaAs/AlAs superlattices with a similar design is performed. However, the number of periods and diode areas are different. The values of the parasitic resistances of the near-contact diode regions are correlated, and the specific voltage drop across one superlattice period is determined for all special points in the current–voltage characteristics of the diodes. The mechanism of the appearance of stable current oscillations in diodes based on 6-, 18-, 30-, 70-, and 120-period GaAs/AlAs superlattices with a high doping level is investigated.

superlatticeselectron transportdiodesTHz generation