SemiconductorsSemiconductorsSemiconductors1063-78261090-6479Физико-технический институт им. А.Ф.Иоффе РАН20275710.1134/S1063782618040164XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical PropertiesResearch ArticlePurcell Effect in Tamm Plasmon Structures with QD EmitterGubaydullinA. R.
Russian Federation
m.kaliteevski@mail.ruSymondsC.
France
m.kaliteevski@mail.ruBellessaJ.
France
m.kaliteevski@mail.ruIvanovK. A.
Russian Federation
m.kaliteevski@mail.ruKolykhalovaE. D.
Russian Federation
m.kaliteevski@mail.ruSasindM. E.
Russian Federation
m.kaliteevski@mail.ruPozinaG.
Sweden
m.kaliteevski@mail.ruKaliteevskiM. A.
Russian Federation
m.kaliteevski@mail.ruSt Petersburg Academic UniversityUniv Lyon, Université Claude Bernard Lyon 1, CNRSITMO UniversityIoffe InstituteSaint Petersburg Scientific CenterDepartment of Physics, Chemistry and Biology0104201852445245723122023Copyright ©; 2018, Pleiades Publishing, Ltd.2018Pleiades Publishing, Ltd.https://journals.rcsi.science/1063-7826/article/view/202757

We study Tamm plasmon structure based on GaAs/Al0.95GaAs distributed Bragg reflector covered by thin silver layer, with active area formed by InAs quantum dots. We have measured the spectral and angular characteristics of photoluminescence and performed theoretical calculation of the spontaneous emission rate (modal Purcell factor) in the structure by using S-quantization formalism. We show that for Tamm plasmon mode the spontaneous emission can be enhanced by more than an order of magnitude, despite absorption in metallic layer.