Kinetics of Atomic Recombination on Silicon Samples in Chlorine Plasma

Аннотация

The recombination kinetics of chlorine atoms on the wall of a plasmachemical reactor and on silicon samples in the positive column of a glow discharge in Cl₂ has been studied experimentally. The rate constants and probabilities of the heterogeneous recombination of chlorine atoms on the plasma limiting surfaces, as well as of the chemical interaction of chlorine atoms with silicon, are calculated. The temperature and time dependences of the probabilities of the chemical interaction of chlorine atoms with silicon are analyzed, and optimal conditions for conducting pulse relaxation experiments are determined.