Email this article Effect of collisions on the angular distribution of ions under plasmachemical etching
- Authors: Devyatko Y.N.1,2, Fadeev A.V.2
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Affiliations:
- National Research Nuclear University “MEPhI,”
- Institute of Physics and Technology
- Issue: Vol 43, No 8 (2017)
- Pages: 838-843
- Section: Plasma Technologies
- URL: https://journals.rcsi.science/1063-780X/article/view/186188
- DOI: https://doi.org/10.1134/S1063780X17080050
- ID: 186188
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Abstract
The most important parameter responsible for the quality of high-aspect structures produced by plasmachemical etching is the angular distribution of ions near the processed surface. In this work, the effect of collisions and gas pressure on the angular distributions of ions and chemically active radicals in the chamber of a high-pressure plasmachemical reactor with a remote plasma source is analyzed theoretically.
About the authors
Yu. N. Devyatko
National Research Nuclear University “MEPhI,”; Institute of Physics and Technology
Author for correspondence.
Email: ydevyatko@mail.ru
Russian Federation, Moscow, 115409; Moscow, 117218
A. V. Fadeev
Institute of Physics and Technology
Email: ydevyatko@mail.ru
Russian Federation, Moscow, 117218
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