Nonthermal Mechanism of Defect Formation in the CdHgTe Semiconductor on Exposure to Soft X-rays

R. Sh. Ramakoti; O. B. Anan’in; A. P. Melekhov; I. A. Gerasimov; G. S. Bogdanov; V. G. Sredin; I. K. Novikov; I. V. Frolova; P. S. Dzhumaev

doi:10.1134/S1063778819110188

Nonthermal Mechanism of Defect Formation in the CdHgTe Semiconductor on Exposure to Soft X-rays

作者: Ramakoti R.S.¹, Anan’in O.B.¹, Melekhov A.P.¹, Gerasimov I.A.¹, Bogdanov G.S.¹, Sredin V.G.², Novikov I.K.¹, Frolova I.V.¹, Dzhumaev P.S.¹
隶属关系:
1. National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
2. Peter the Great Military Academy of Strategic Missile Forces
期: 卷 82, 编号 11 (2019)
页面: 1571-1575
栏目: Interaction of Plasmas, Particle Beams, and Radiation with Matter
URL: https://journals.rcsi.science/1063-7788/article/view/195891
DOI: https://doi.org/10.1134/S1063778819110188
ID: 195891

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The effect of irradiation with soft X-rays produced by a laser plasma source equipped with an X-ray concentrator on the properties of the CdHgTe semiconductor are investigated. For this purpose, the mass concentration of atoms in the near-surface layer of the material is measured. It is demonstrated that the action of soft X-ray radiation leads to change in the solid-solution composition at the surface via a nonthermal mechanism and generates surface defects.