Transport, Magnetic, and Memristive Properties of a Nanogranular (CoFeB)x(LiNbOy)100–x Composite Material


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Аннотация

The properties of (CoFeB)x(LiNbOy)100–x nanocomposite films with a ferromagnetic alloy content x = 6–48 at % are comprehensively studied. The films are shown to consist of ensembles of CoFe granules 2–4 nm in size, which are strongly elongated (up to 10–15 nm) in the nanocomposite growth direction and are located in an LiNbOy matrix with a high content of Fe2+ and Co2+ magnetic ions (up to 3 × 1022 cm–3). At T ≤ 25 K, a paramagnetic component of the magnetization of nanocomposites is detected along with a ferromagnetic component, and the contribution of the former component is threefold that of the latter. A hysteresis of the magnetization is observed below the percolation threshold up to x ≈ 33 at %, which indicates the appearance of a superferromagnetic order in the nanocomposites. The temperature dependence of the electrical conductivity of the nanocomposites in the range T ≈ 10–200 K on the metallic side of the metal–insulator transition (44 at % < x < 48 at %) is described by a logarithmic law σ(T) ∝ lnT. This law changes into the law of “1/2” at x ≤ 40 at %. The tunneling anomalous Hall effect is strongly suppressed and the longitudinal conductivity turns out to be lower than in a (CoFeB)x(AlOy)100–x composite material by an order of magnitude. The capacitor structures based on (CoFeB)x(LiNbOy)100–x films exhibit resistive switching effects. They are related to (i) the formation of isolated chains of elongated granules and an anomalously strong decrease in the resistance in fields E > 104 V/cm because of the suppression of Coulomb blockage effects and the generation of oxygen vacancies VO and (ii) the injection (or extraction) of VO vacancies (depending on the sign of voltage) into a strongly oxidized layer in the nanocomposites, which is located near an electrode of the structure and controls its resistance. The number of stable resistive switchings exceeds 105 at a resistance ratio Roff/Ron ~ 50.

Авторлар туралы

V. Rylkov

National Research Centre “Kurchatov Institute,”; Fryazino Branch, Kotelnikov Institute of Radio Engineering and Electronics

Хат алмасуға жауапты Автор.
Email: vvrylkov@mail.ru
Ресей, pl. Kurchatova 1, Moscow, 123182; Fryazino, Moscow oblast, 141190

S. Nikolaev

National Research Centre “Kurchatov Institute,”

Email: vvrylkov@mail.ru
Ресей, pl. Kurchatova 1, Moscow, 123182

V. Demin

National Research Centre “Kurchatov Institute,”

Email: vvrylkov@mail.ru
Ресей, pl. Kurchatova 1, Moscow, 123182

A. Emelyanov

National Research Centre “Kurchatov Institute,”

Email: vvrylkov@mail.ru
Ресей, pl. Kurchatova 1, Moscow, 123182

A. Sitnikov

Voronezh State Technical University

Email: vvrylkov@mail.ru
Ресей, Voronezh, 394026

K. Nikiruy

National Research Centre “Kurchatov Institute,”; Moscow Institute of Physics and Technology

Email: vvrylkov@mail.ru
Ресей, pl. Kurchatova 1, Moscow, 123182; Institutskii per. 9, Dolgoprudnyi, Moscow oblast, 141700

V. Levanov

National Research Centre “Kurchatov Institute,”; Moscow State University

Email: vvrylkov@mail.ru
Ресей, pl. Kurchatova 1, Moscow, 123182; Moscow, 119991

M. Presnyakov

National Research Centre “Kurchatov Institute,”

Email: vvrylkov@mail.ru
Ресей, pl. Kurchatova 1, Moscow, 123182

A. Taldenkov

National Research Centre “Kurchatov Institute,”

Email: vvrylkov@mail.ru
Ресей, pl. Kurchatova 1, Moscow, 123182

A. Vasiliev

National Research Centre “Kurchatov Institute,”

Email: vvrylkov@mail.ru
Ресей, pl. Kurchatova 1, Moscow, 123182

K. Chernoglazov

National Research Centre “Kurchatov Institute,”

Email: vvrylkov@mail.ru
Ресей, pl. Kurchatova 1, Moscow, 123182

A. Vedeneev

Fryazino Branch, Kotelnikov Institute of Radio Engineering and Electronics

Email: vvrylkov@mail.ru
Ресей, Fryazino, Moscow oblast, 141190

Yu. Kalinin

Voronezh State Technical University

Email: vvrylkov@mail.ru
Ресей, Voronezh, 394026

A. Granovsky

Moscow State University

Email: vvrylkov@mail.ru
Ресей, Moscow, 119991

V. Tugushev

National Research Centre “Kurchatov Institute,”

Email: vvrylkov@mail.ru
Ресей, pl. Kurchatova 1, Moscow, 123182

A. Bugaev

Moscow Institute of Physics and Technology; Fryazino Branch, Kotelnikov Institute of Radio Engineering and Electronics

Email: vvrylkov@mail.ru
Ресей, Institutskii per. 9, Dolgoprudnyi, Moscow oblast, 141700; Fryazino, Moscow oblast, 141190

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