Study of the grazing-incidence X-ray scattering of strongly disturbed fractal surfaces
- Авторы: Roshchin B.S.1, Chukhovsky F.N.1, Pavlyuk M.D.1, Opolchentsev A.M.1, Asadchikov V.E.1
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Учреждения:
- Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics”
- Выпуск: Том 62, № 2 (2017)
- Страницы: 313-317
- Раздел: Surface and Thin Films
- URL: https://journals.rcsi.science/1063-7745/article/view/190894
- DOI: https://doi.org/10.1134/S1063774517010205
- ID: 190894
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Аннотация
The applicability of different approaches to the description of hard X-ray scattering from rough surfaces is generally limited by a maximum surface roughness height of no more than 1 nm. Meanwhile, this value is several times larger for the surfaces of different materials subjected to treatment, especially in the initial treatment stages. To control the roughness parameters in all stages of surface treatment, a new approach has been developed, which is based on a series expansion of wavefield over the plane eigenstate-function waves describing the small-angle scattering of incident X-rays in terms of plane q-waves propagating through the interface between two media with a random function of relief heights. To determine the amplitudes of reflected and transmitted plane q-waves, a system of two linked integral equations was derived. The solutions to these equations correspond (in zero order) to the well-known Fresnel expressions for a smooth plane interface. Based on these solutions, a statistical fractal model of an isotropic rough interface is built in terms of root-mean-square roughness σ, two-point correlation length l, and fractal surface index h. The model is used to interpret X-ray scattering data for polished surfaces of single-crystal cadmium telluride samples.
Об авторах
B. Roshchin
Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics”
Автор, ответственный за переписку.
Email: ross@crys.ras.ru
Россия, Moscow, 119333
F. Chukhovsky
Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics”
Email: ross@crys.ras.ru
Россия, Moscow, 119333
M. Pavlyuk
Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics”
Email: ross@crys.ras.ru
Россия, Moscow, 119333
A. Opolchentsev
Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics”
Email: ross@crys.ras.ru
Россия, Moscow, 119333
V. Asadchikov
Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics”
Email: ross@crys.ras.ru
Россия, Moscow, 119333
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