Enviar artigo por via de e-mail UV-Sensitive Porous ZnO-Based Nanocrystalline Films
- Autores: Asvarov A.S.1,2, Abduev A.K.1, Akhmedov A.K.1, Kanevsky V.M.3, Muslimov A.E.3
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Afiliações:
- Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
- Analytical Center of Collective Use, Dagestan Scientific Center, Russian Academy of Sciences
- Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,” Russian Academy of Sciences
- Edição: Volume 63, Nº 6 (2018)
- Páginas: 994-997
- Seção: Nanomaterials and Ceramics
- URL: https://journals.rcsi.science/1063-7745/article/view/193234
- DOI: https://doi.org/10.1134/S1063774518060032
- ID: 193234
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Resumo
Nanocrystalline porous ZnO films have been synthesized by thermal oxidation of amorphous zinc deposits with an anomalously developed surface, which were previously formed using magnetron sputtering. The microstructure, morphology, phase composition, and optical properties of the synthesized oxide films have been studied by X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, and spectrophotometry. Applicability of the two-stage technique to fabrication of porous ZnO films for UV detectors is demonstrated.
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Sobre autores
A. Asvarov
Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences; Analytical Center of Collective Use, Dagestan Scientific Center, Russian Academy of Sciences
Autor responsável pela correspondência
Email: cht-if-ran@mail.ru
Rússia, Makhachkala, 367015; Makhachkala, 367032
A. Abduev
Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
Email: cht-if-ran@mail.ru
Rússia, Makhachkala, 367015
A. Akhmedov
Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
Email: cht-if-ran@mail.ru
Rússia, Makhachkala, 367015
V. Kanevsky
Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,”Russian Academy of Sciences
Email: cht-if-ran@mail.ru
Rússia, Moscow, 119333
A. Muslimov
Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,”Russian Academy of Sciences
Email: cht-if-ran@mail.ru
Rússia, Moscow, 119333
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