Temperature-dependent resonant tunneling in disordered quasi-one-dimensional N–I–N junctions

Аннотация

Formulas are obtained for the current–voltage characteristics and conductance of a quasi-one-dimensional N–I–N junction (where N is an ordinary metal and I is an insulator) with quantum resonance percolation trajectories (QRPTs) in a disordered I-layer at temperatures T > 0 K and the energy of local single-impurity electron level being equal to the Fermi energy ε₀ = ε_F. Under these conditions, the impact QRPTs have on the current through the junctions weakens as the temperature grows, and the conductance drops; this is in contrast to the rise in conductance of an empty junction (with no impurities in the I-layer).