Enviar artigo por via de e-mail Evolution of the Hysteresis Loops of Iron Garnet Films upon Deep Layered Etching
- Autores: Logunov M.V.1, Nikitov S.A.1,2, Stognii A.I.3, Safonov S.S.1, Temiryazev A.G.4
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Afiliações:
- Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
- Moscow Institute of Physics and Technology (National Research University)
- Scientific and Practical Center for Materials Science, National Academy of Sciences of Belarus
- Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
- Edição: Volume 83, Nº 7 (2019)
- Páginas: 866-868
- Seção: Article
- URL: https://journals.rcsi.science/1062-8738/article/view/187459
- DOI: https://doi.org/10.3103/S1062873819070256
- ID: 187459
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Resumo
Dependences are studied for the parameters of the hysteresis loops of iron garnet monocrystalline films on film thickness as a result of their layered etching by ion-beam sputtering with an oxygen ion beam. The coercive force of the films in magnetic fields corresponding to the motion of domain walls does not exceed 0.6 Oe as a result of layered etching through as much as 90% of a film’s thickness. This is important when using films in devices based on domain walls and other nanoscale spin structures.
Sobre autores
M. Logunov
Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Autor responsável pela correspondência
Email: logunov@cplire.ru
Rússia, Moscow, 125009
S. Nikitov
Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences; Moscow Institute of Physics and Technology (National Research University)
Email: logunov@cplire.ru
Rússia, Moscow, 125009; Dolgoprudny, 141701
A. Stognii
Scientific and Practical Center for Materials Science, National Academy of Sciences of Belarus
Email: logunov@cplire.ru
Belarus, Minsk, 220072
S. Safonov
Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Email: logunov@cplire.ru
Rússia, Moscow, 125009
A. Temiryazev
Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
Email: logunov@cplire.ru
Rússia, Fryazino, 141120
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