Email this article Evolution of the Hysteresis Loops of Iron Garnet Films upon Deep Layered Etching
- Authors: Logunov M.V.1, Nikitov S.A.1,2, Stognii A.I.3, Safonov S.S.1, Temiryazev A.G.4
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Affiliations:
- Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
- Moscow Institute of Physics and Technology (National Research University)
- Scientific and Practical Center for Materials Science, National Academy of Sciences of Belarus
- Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
- Issue: Vol 83, No 7 (2019)
- Pages: 866-868
- Section: Article
- URL: https://journals.rcsi.science/1062-8738/article/view/187459
- DOI: https://doi.org/10.3103/S1062873819070256
- ID: 187459
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Abstract
Dependences are studied for the parameters of the hysteresis loops of iron garnet monocrystalline films on film thickness as a result of their layered etching by ion-beam sputtering with an oxygen ion beam. The coercive force of the films in magnetic fields corresponding to the motion of domain walls does not exceed 0.6 Oe as a result of layered etching through as much as 90% of a film’s thickness. This is important when using films in devices based on domain walls and other nanoscale spin structures.
About the authors
M. V. Logunov
Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Author for correspondence.
Email: logunov@cplire.ru
Russian Federation, Moscow, 125009
S. A. Nikitov
Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences; Moscow Institute of Physics and Technology (National Research University)
Email: logunov@cplire.ru
Russian Federation, Moscow, 125009; Dolgoprudny, 141701
A. I. Stognii
Scientific and Practical Center for Materials Science, National Academy of Sciences of Belarus
Email: logunov@cplire.ru
Belarus, Minsk, 220072
S. S. Safonov
Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Email: logunov@cplire.ru
Russian Federation, Moscow, 125009
A. G. Temiryazev
Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
Email: logunov@cplire.ru
Russian Federation, Fryazino, 141120
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