Author Details
Vasiljev, N. G.
| Issue | Section | Title | File |
| Vol 82, No 1 (2018) | Proceedings of the XVI A.P. Sukhorukov National Seminar “The Physics and Applications of Microwaves” (“Waves-2017”) | Noncontact determination of the rate of surface recombination of nonequilibrium charge carriers at the p–p+ (n–n+) boundaries of n+–p(n)–p+ silicon structures by means of compensation |