Features of cluster ion treatment of the surface of KGd(WO4)2:Nd single crystal

Мұқаба

Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
Рұқсат жабық Рұқсат берілді
Рұқсат жабық Тек жазылушылар үшін

Аннотация

The features of the surface treatment of single crystals of potassium gadolinium tungstate doped with neodymium ions with low- and high-energy cluster argon ions are considered. Two radically different treatment modes were used: low-energy for more efficient surface smoothing and high-energy for more efficient target etching. Using atomic force microscopy, the topography of the target surface was analyzed before and after cluster ion treatment. Treatment in a low-energy mode was shown to smooth out irregularities on the target surface formed by chemical-mechanical polishing at an etching depth of less than 100 nm. The root-mean-square roughness and maximum height difference of the initial and treated surfaces of potassium gadolinium tungstate doped with neodymium ions were compared. Survey X-ray photoelectron spectra of the initial surface of a KGd(WO4)2:Nd single crystal and after the cluster ion treatment in different modes are presented. The intensities of the potassium and gadolinium peaks were shown to decrease after cluster ion treatment in both modes. A significant decrease in the concentration of potassium atoms in the subsurface layer of the target is explained by the predominant sputtering of potassium as a lighter chemical element. The mutual decrease in the concentrations of gadolinium and potassium atoms can be explained by the weak bonds of these atoms in the lattice of the KGd(WO4)2:Nd single crystal.

Авторлар туралы

I. Nikolaev

Novosibirsk State University

Хат алмасуға жауапты Автор.
Email: i.nikolaev@nsu.ru
Ресей, 630090, Novosibirsk

N. Korobeishchikov

Novosibirsk State University

Email: korobei@nsu.ru
Ресей, 630090, Novosibirsk

Әдебиет тізімі

  1. Yamada I. Materials Processing by Cluster ion Beams: History, Technology, and Applications. Boca Raton, Florida: CRC Press. 2016.
  2. Popok V.N., Barke I., Campbell E.E.B., Meiwes-Bro- er K.-H. // Surf. Sci. Rep. 2011. V. 66. P. 347. https://doi.org/10.1016/j.surfrep.2011.05.002
  3. Иешкин A.E., Толстогузов А.Б., Коробейщиков Н.Г., Пеленович В.О., Черныш В.С. // Успехи физических наук. 2022. Т. 192. C. 722. https://doi.org/10.3367/UFNr.2021.06.038994 (Ieshkin A.E., Tolstoguzov A.B., Korobeishchikov N.G., Pelenovich V.O., Chernysh V.S. // Phys–Usp. 2022. V. 65. No. 7. P. 677. https://doi.org/10.3367/UFNe.2021.06.038994)
  4. Lee J.L.S., Ninomiya S., Matsuo J., Gilmore I.S., Seah M.P., Shard A.G. // Anal. Chem. 2010. V. 82. P. 98. https://doi.org/10.1021/ac901045q
  5. Delcorte A., Garrison B.J., Hamraoui K. // Surf. Interface Anal. 2011. V. 43. P. 16. https://doi.org/10.1002/sia.3405
  6. Yancey D.F., Reinhardt C. // J. Electron Spectrosc. 2019. V. 231. P. 104. https://doi.org/10.1016/j.elspec.2018.01.005
  7. Insepov Z., Yamada I., Sosnowski M. // Mater. Chem. Phys. 1998. V. 54. P. 234. https://doi.org/10.1016/S0254-0584(98)00032-7
  8. Teo E.J., Toyoda N., Yang C., Bettiol A.A., Teng J.H. // Appl. Phys. A. 2014. V. 117. P. 719. https://doi.org/10.1007/s00339-014-8728-1
  9. Коробейщиков Н.Г., Николаев И.В., Роенко М.А. // Письма в ЖТФ. 2019. Т. 45. № 6. С. 30. https://doi.org/10.21883/PJTF.2019.06.47496.17646 (Korobeishchikov N.G., Nikolaev I.V., Roenko M.A. // Tech. Phys. Lett. 2019. V. 45. No.3. P. 274. https://doi.org/10.1134/S1063785019030295)
  10. Toyoda N., Tilakaratne B., Saleem I., Chu W.K. // Appl. Phys. Rev. 2019. V. 6. P. 020901. https://doi.org/10.1063/1.5030500
  11. Zeng X., Pelenovich V., Xing B., Rakhimov R., Zuo W., Tolstogouzov A., Liu C., Fu D., Xiao X. // Beilstein J. Nanotechnol. 2020. V. 11. P. 383. https://doi.org/10.3762/bjnano.11.29
  12. Kireev D.S., Ieshkin A.E., Shemukhin A.A. // Tech. Phys. Lett. 2020. V. 46. P. 409. https://doi.org/10.1134/S1063785020050065
  13. Kirkpatrick A., Kirkpatrick S., Walsh M., Chau S., Mack M., Harrison S., Svrluga R., Khoury J. // Nucl. Instrum. Methods Phys. Res. B. 2013. V. 307. P. 281. https://doi.org/10.1016/j.nimb.2012.11.084
  14. Ieshkin A.E., Kireev D.S., Ermakov Yu.A., Trifonov A.S., Presnov D.E., Garshev A.V., Anufriev Yu.V., Prokhoro-va I.G., Krupenin V.A., Chernysh V.S. // Nucl. Instrum. Methods Phys. Res. B. 2018. V. 421. P. 27. https://doi.org/10.1016/j.nimb.2018.02.019
  15. Cano-Torres J.M., Serrano M.D., Zaldo C., Rico M., Mateos X., Liu J., Griebner U., Petrov V., Valle F.J., Galán M., Viera G. // J. Opt. Soc. Am. 2006. V. 23. P. 2494. https://doi.org/10.1364/JOSAB.23.002494
  16. Brenier A. // J. Quant. Elect. 2011. V. 47. P. 279. https://doi.org/10.1088/1612-2011/11/11/115819
  17. Zhang W., Zhang R., Yang S., Wang R., Na L., Hua R. // Mater. Res. Bull. 2020. V. 122. Р. 110689. https://doi.org/10.1016/j.materresbull.2019.110689
  18. Chandra Talukder R., Zubaer Eibna Halim Md., Waritanant T., Major A. // Opt. Let. 2016. V. 41. P. 3810. https://doi.org/10.1364/OL.41.003810
  19. Loiko P.A., Yumashev K.V., Kuleshov N.V., Savitski V.G., Calvez S., Burns D., Pavlyuk A.A. // Opt. Express. 2009. V. 17. P. 23536. https://doi.org/10.1364/OE.17.023536
  20. Atanasov P.A., Okato T., Tomov R.I., Obara M. // Thin Solid Films. 2004. V. 453–454. P. 150. https://doi.org/10.1016/j.tsf.2003.11.089
  21. Atuchin V.V., Kesler V.G., Maklakova N.Yu., Pokrovs- ky L.D., Sheglov D.V. // Eur. Phys. J. B. 2006. V. 51. P. 293. https://doi.org/10.1140/epjb/e2006-00208-8
  22. Shen J., Liu S., Yi K., He H., Shao J., Fan Z. // Optik. 2005. V. 116. P. 288. https://doi.org/10.1016/j.ijleo.2005.02.002
  23. Lee J., Kim J.C., Kim J., Singh R.K., Arjunan A.C., Lee H. // Thin Solid Films. 2018. V. 660. P. 516. https://doi.org/10.1016/j.tsf.2018.07.002
  24. Korobeishchikov N.G., Zarvin A.E., Madirbaev V.Z., Sharafutdinov R.G. // Plasma Chem. Plasma Proc. 2005. V. 25. P. 319. https://doi.org/10.1007/s11090-004-3132-9
  25. Korobeishchikov N.G., Nikolaev I.V., Roenko M.A., Atuchin V.V. // Appl. Phys. A. 2018. V. 124. P. 833. https://doi.org/10.1007/s00339-018-2256-3
  26. Korobeishchikov N.G., Nikolaev I.V., Roenko M.A. // J. Phys.: Conf. Ser. 2018. V. 1115. Р. 032016. https://doi.org/10.1088/1742-6596/1115/3/032016
  27. Korobeishchikov N.G., Nikolaev I.V., Atuchin V.V., Prosvirin I.P., Tolstogouzov A., Pelenovich V., Fu D.J. // Surf. Interfaces. 2021. V. 27. Р. 101520. https://doi.org/10.1016/j.surfin.2021.101520
  28. Seah M.P. // J. Phys. Chem. C. 2013. V. 117. P. 12622. https://doi.org/10.1021/jp402684c
  29. Cumpson P.J., Portoles J.F., Barlow A.J., Sano N. // J. Appl. Phys. 2013. V. 114. Р. 124313. http://doi.org/10.1063/1.4823815
  30. Korobeishchikov N.G., Nikolaev I.V., Atuchin V.V., Prosvirin I.P., Kapishnikov A.V., Tolstogouzov A., Fu D.J. // Mater. Res. Bull. 2023. V. 158. Р. 112082. http://doi.org/10.1016/j.materresbull.2022.112082
  31. Korobeishchikov N.G., Stishenko P.V., Nikolaev I.V., Yakovlev V.V. // Plasma Chem. Plasma Proc. 2022. V. 42. P. 1223. http://doi.org/10.1007/s11090-022-10286-8
  32. Greczynski G., Hultman L. // Appl. Surf. Sci. 2021. V. 542. P. 148599. https://doi.org/10.1016/j.apsusc.2020.148599
  33. Macalik L., Kaczmarek S.M., Leniec G., Hanuza J., Pietraszko A., Bodziony T., Skibiński T. // Sci. Jet. 2015. V. 4. Р. 122.

Қосымша файлдар

Қосымша файлдар
Әрекет
1. JATS XML
Жүктеу
2. Fig. 1. AFM images of the 10 × 10 µm surface of a KGW single crystal:Nd: a – initial; b – after treatment with low–energy cluster argon ions; c - after treatment with high-energy cluster argon ions.

Жүктеу (712KB)
Метадеректер
3. Fig. 2. Overview X-ray photoelectron spectra of the initial surfaces KGW and KGW:Nd and KGW treated surfaces:Nd in various modes.

Жүктеу (213KB)
Метадеректер

© Russian Academy of Sciences, 2024

Осы сайт cookie-файлдарды пайдаланады

Біздің сайтты пайдалануды жалғастыра отырып, сіз сайттың дұрыс жұмыс істеуін қамтамасыз ететін cookie файлдарын өңдеуге келісім бересіз.< / br>< / br>cookie файлдары туралы< / a>