The Compacts of Boron-Doped Synthetic Diamond: Electrochemical Properties of Samples with Extremely High Doping Level
- Авторлар: Pleskov Y.1, Krotova M.1, Ekimov E.2
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Мекемелер:
- Frumkin Institute of Physical Chemistry and Electrochemistry
- Vereshchagin Institute for High Pressure Physics
- Шығарылым: Том 55, № 3 (2019)
- Беттер: 154-160
- Бөлім: Article
- URL: https://journals.rcsi.science/1023-1935/article/view/191899
- DOI: https://doi.org/10.1134/S102319351902006X
- ID: 191899
Дәйексөз келтіру
Аннотация
Compacts of boron-doped synthetic diamond with extremely high doping level are obtained at a pressure of 8–9 GPa and temperature about 2500 K from graphite-boron carbide (5 or 7%) mixtures. The boron content in the diamond estimated by the diamond lattice parameter (0.3573–0.3575 and 0.3576–0.3578 nm, respectively) is about 1–3% and 3–4%, respectively. Thus obtained compacts showed the highest electroactivity of all known diamond, diamond-based, and diamond-like materials (by example of anodic chlorine evolution reaction). In compliance with the earlier found general trend for all known diamond, diamond-based, and diamond-like materials, with the increasing of the compact doping level some increase in the material’s electroactivity also occurs. The heavily boron-doped diamond compacts can be used as indicator electrodes in the electroanalytical determination of ethylenediaminetetraacetic acid in aqueous solutions (by its electrooxidation current).
Авторлар туралы
Yu. Pleskov
Frumkin Institute of Physical Chemistry and Electrochemistry
Хат алмасуға жауапты Автор.
Email: pleskov33@mail.ru
Ресей, Moscow, 119071
M. Krotova
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: pleskov33@mail.ru
Ресей, Moscow, 119071
E. Ekimov
Vereshchagin Institute for High Pressure Physics
Email: pleskov33@mail.ru
Ресей, Troitsk, Moscow, 142190