卷 60, 编号 9 (2017)

A resonance equation for the first unwanted resonant frequency of tunable microwave U-shaped loop-type resonator with variable capacitance has been derived. This frequency does not depend on the variable capacitance value; it is invariable and proportional to λ-type oscillations. The ascertained feature makes it possible to determine the ratio of the first unwanted resonant frequency to the frequency of the main resonance and control the rejection bandwidth of tunable filters with U-shaped resonators. A narrowband (2%) varicap-tuned filter with extended rejection band has been built and its experimental data are presented. The experimental four-resonator filter could be tuned in the frequency range 225–400 MHz. The filter rejection band in terms of the attenuation level of –40 dB was located in the frequency range 420–1290 MHz, i.e., f_max /f_min = 3.07. Varicap-tuned filters with microstrip U-shaped resonators are shown to have a good potential for their practical use.

The possibility of developing radiation detectors based on field-effect transistors (FET) is investigated. Transistor saturation current is chosen as an informative parameter for modeling. Experimental results show that the drain saturation current of the FET with p-n junction as a gate is decreasing after irradiation. In metal-oxide-semiconductor (MOS) FETs during radiation-induced defect formation two effects are competing, therefore the result of radiation influence is highly dependent on the electro-physical properties of transistors before irradiation and on the absorbed radiation dose. It is shown that saturation current increases with absorbed radiation dose for all the transistors with low electron concentration in a channel above certain levels of absorbed radiation. While the opposite effect is observed for high electron concentration in a channel, i.e. the saturation current drops. Obtained dependences of the drain saturation current of FET on the irradiation dose facilitated development of simple detector design for low levels of radiation. The bridge circuit is used in the radiation sensor to minimize the effect of temperature fluctuations. The sensitivity of the detector is enhanced several times with the help of two pairs of FETs with the opposite sign of radiation sensitivity.

An X-band tunable microwave low-phase noise planar oscillator employing a novel-fed dielectric resonator (DR) with a single transistor has been investigated and realized. A ZrSnTi oxide composite ceramic-based DR with dielectric permittivity of 95 enclosed in a metallic cavity with an unloaded Q factor of 5,000 at 10 GHz is proposed. The resonant frequency affinity with respect to geometric parameters is established by using the compensation technique based on dual negative conductance feedback, the outputs of which are combined via a Wilkinson power divider (WPD). The feedback parallel-coupled DR oscillator is incorporated into a laminate microwave board using the photolithographic technique. The oscillator includes a pseudomorphic low noise amplifier based on a high-electron-mobility transistor. Hence, the proposed oscillator with mechanic tuning is measured, and the results show that DR resonates at TE_01δ mode with frequency of 10 GHz. The measured phase noise of the oscillator is –81.03 dBc/Hz at a 100 kHz offset.