Self-Action of Intense Millimeter Waves in Waveguides with Integrated P-I-N Structures
- 作者: Moroz I.1, Grimalsky V.2, Koshevaya S.2, Kotsarenko A.3
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隶属关系:
- Rivne State Humanitarian University
- Universidad Autónoma del Estado de Morelos
- Universidad Autónoma del Carmen
- 期: 卷 61, 编号 3 (2018)
- 页面: 110-120
- 栏目: Article
- URL: https://journals.rcsi.science/0735-2727/article/view/177193
- DOI: https://doi.org/10.3103/S0735272718030032
- ID: 177193
如何引用文章
详细
The nonlinear interaction of high power millimeter (mm) electromagnetic waves with silicon integral p-i-n structures placed in a metal waveguide is theoretically investigated. The level of double injection of charge carriers due to detection of high intensity millimeter wave electric field in p-i-n structures is estimated. A mathematical model of the mutual influence of electromagnetic waves and injected charge carriers in the active region of p-i-n structures is formulated. A numerical solution of the nonlinear Helmholtz equation supplemented by proper boundary conditions on the active region boundary is obtained. The effect of high-power electromagnetic waves leads to an excessive injection of carriers into the active region of the semiconductor between p+-i, n+-i injection junctions and redistribution of the electric field in the structure. The reflection and transmission coefficients vary rapidly with the change in the input amplitude of the electromagnetic wave. This leads to bistability of these coefficients. The bistability is more pronounced in the low-frequency part of the mm range.
作者简介
I. Moroz
Rivne State Humanitarian University
编辑信件的主要联系方式.
Email: Igor_Moroz@yahoo.com
乌克兰, Rivne
V. Grimalsky
Universidad Autónoma del Estado de Morelos
Email: Igor_Moroz@yahoo.com
墨西哥, Cuernavaca, Morelos
S. Koshevaya
Universidad Autónoma del Estado de Morelos
Email: Igor_Moroz@yahoo.com
墨西哥, Cuernavaca, Morelos
A. Kotsarenko
Universidad Autónoma del Carmen
Email: Igor_Moroz@yahoo.com
墨西哥, Ciudad del Carmen