FREQUENCY DEPENDENCE OF VACANCY MOVEMENT HYSTERESIS IN A CLOSED MEMRISTOR BASED ON AN EXACTLY SOLVABLE MODEL OF CONTROLLED NONLINEAR DIFFUSION

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The frequency dependence of vacancy movement hysteresis in a memristor closed on both sides under the influence of periodic electric current flowing through the memristor is considered. Based on an exactly solvable nonlinear model, an equation for hysteresis loops during the passage of rectangular current pulses with a duty cycle of 2 is obtained. The efficiency of vacancy charge transfer by current compared to their free diffusion is evaluated. It is shown that maximum efficiency is achieved at a specific memristor switching period, which depends on the amplitude of the applied current. Analytical asymptotics of this dependence and memristor resistance depending on the amplitude and period of the current passing through the memristor are obtained.

Sobre autores

I. Boylo

Galkin Donetsk Institute for Physics and Engineering

Email: boylo@donfti.ru
Rússia, Donetsk, 283048

K. Metlov

Galkin Donetsk Institute for Physics and Engineering

Autor responsável pela correspondência
Email: metlov@donfti.ru
Rússia, Donetsk, 283048

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