Synthesis specifics of Mg(Fe 0.8 Ga 0.2 ) 2 O 4  films on GaN

O. N. Kondrat’eva; A. I. Stognii; N. N. Novitskii; A. V. Bespalov; O. L. Golikova; G. E. Nikiforova; M. N. Smirnova; V. A. Ketsko

doi:10.1134/S0036023616090102

Synthesis specifics of Mg(Fe_0.8Ga_0.2)₂O₄ films on GaN

作者: Kondrat’eva O.N.¹, Stognii A.I.², Novitskii N.N.², Bespalov A.V.³, Golikova O.L.³, Nikiforova G.E.¹, Smirnova M.N.¹, Ketsko V.A.¹
隶属关系:
1. Kurnakov Institute of General and Inorganic Chemistry
2. Research and Engineering Center for Materials Science
3. Moscow Technological University (MGTU MIREA)
期: 卷 61, 编号 9 (2016)
页面: 1080-1084
栏目: Synthesis and Properties of Inorganic Compounds
URL: https://journals.rcsi.science/0036-0236/article/view/166732
DOI: https://doi.org/10.1134/S0036023616090102
ID: 166732

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Mg(Fe_0.8Ga_0.2)₂O₄ films 340 nm thick were prepared by ion-beam sputtering on aluminasmoothed GaN substrates. Reactions that can occur between the components of heterostructure during its crystallization in the range 298.15–1273 K are analyzed. In order for Mg(Fe_0.8Ga_0.2)₂O₄ films to be continuous, their crystallization temperature should be lowered and alumina deposition—sputtering on GaN should be repeated several times.